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Ultrawide‐Bandgap Amorphous MgGaO: Nonequilibrium Growth and Vacuum Ultraviolet Application
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-12-09 , DOI: 10.1002/adom.201801272 Mei Dong 1 , Wei Zheng 1 , Cunhua Xu 1 , Richeng Lin 1 , Dan Zhang 1 , Zhaojun Zhang 1 , Feng Huang 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-12-09 , DOI: 10.1002/adom.201801272 Mei Dong 1 , Wei Zheng 1 , Cunhua Xu 1 , Richeng Lin 1 , Dan Zhang 1 , Zhaojun Zhang 1 , Feng Huang 1
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New ultrawide‐bandgap (>6.0 eV) photosensitive materials are in urgent need to meet the requirements of vacuum‐ultraviolet (VUV) photodetection applied in deep space exploration. Here, a nonequilibrium growth method is reported to fabricate amorphous MgGaO (a‐MgGaO) films with an ultrawide bandgap of 6.0 eV and an ultrashort absorption edge of 206 nm by alloying MgO and Ga2O3. By combining the as‐grown films with p‐type graphene (p‐Gr) which serves as a transparent conductor, a vacuum‐ultraviolet photovoltaic detector of p‐Gr/a‐MgGaO/n‐SiC (n‐type SiC) is constructed. The device exhibits an excellent VUV spectral selectivity with a VUV (185 nm)/UV (250 nm) rejection ratio exceeding 103, high photoresponsivity (≈10.3 mA W−1) under 0 V bias, and ultrafast response and recovery time of 1.94 µs and 0.6 ms, respectively. The reported nonequilibrium growth method is expected to have tremendous potential in fabricating ultrawide‐bandgap oxide compounds, and finally facilitate future deep space exploration.
中文翻译：
超宽带隙非晶MgGaO：非平衡生长和真空紫外应用
迫切需要新型超宽带隙（> 6.0 eV）感光材料，以满足在深空探测中应用的真空紫外（VUV）光电检测的要求。在这里，据报道有一种非平衡生长方法，是通过将MgO和Ga 2 O 3合金化来制造具有6.0 eV的超宽带隙和206 nm的超短吸收边的非晶MgGaO（a-MgGaO）薄膜。通过将成膜后的薄膜与用作透明导体的p型石墨烯（p-Gr）结合，构建了p-Gr / a-MgGaO / n-SiC（n型SiC）的真空紫外光电检测器。该器件具有出色的VUV光谱选择性，VUV（185 nm）/ UV（250 nm）抑制比超过10 3，光响应率高（≈10.3mA W -1）在0 V偏置下，超快响应和恢复时间分别为1.94 µs和0.6 ms。所报道的非平衡生长方法有望在制造超宽带隙氧化物化合物方面具有巨大潜力，并最终促进未来的深空探索。
更新日期：2018-12-09
中文翻译：
超宽带隙非晶MgGaO：非平衡生长和真空紫外应用
迫切需要新型超宽带隙（> 6.0 eV）感光材料，以满足在深空探测中应用的真空紫外（VUV）光电检测的要求。在这里，据报道有一种非平衡生长方法，是通过将MgO和Ga 2 O 3合金化来制造具有6.0 eV的超宽带隙和206 nm的超短吸收边的非晶MgGaO（a-MgGaO）薄膜。通过将成膜后的薄膜与用作透明导体的p型石墨烯（p-Gr）结合，构建了p-Gr / a-MgGaO / n-SiC（n型SiC）的真空紫外光电检测器。该器件具有出色的VUV光谱选择性，VUV（185 nm）/ UV（250 nm）抑制比超过10 3，光响应率高（≈10.3mA W -1）在0 V偏置下，超快响应和恢复时间分别为1.94 µs和0.6 ms。所报道的非平衡生长方法有望在制造超宽带隙氧化物化合物方面具有巨大潜力，并最终促进未来的深空探索。
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