Lateral graphene p-n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p-n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p-n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p-n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p-n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.

中文翻译：

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无缝横向石墨烯pn结是通过选择性原位掺杂形成的，用于高性能光电探测器。

侧向石墨烯pn结很重要，因为它们构成了各种电子/光子系统的核心组件。然而，由于石墨烯的单层特征，形成具有可控掺杂水平的横向石墨烯pn结仍然是一个巨大的挑战。在本文中，通过进行选择性离子注入和通过动态化学气相沉积原位生长，证明了通过空间控制和可调掺杂直接形成无缝的横向石墨烯pn结。在硼掺杂和氮掺杂区域均实现了杂原子的均匀晶格取代，并且光电评估显示，无缝的横向pn结在环境条件下表现出独特的光电流响应。由于离子注入是微电子学中的标准技术，