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Phosphorus‐Doped Nanocrystalline Diamond for Supercapacitor Application
ChemElectroChem ( IF 3.5 ) Pub Date : 2018-12-19 , DOI: 10.1002/celc.201801543 Siyu Yu 1, 2 , Jing Xu 1 , Hiromitsu Kato 3 , Nianjun Yang 1 , Anna Schulte 4 , Holger Schönherr 4 , Xin Jiang 1
ChemElectroChem ( IF 3.5 ) Pub Date : 2018-12-19 , DOI: 10.1002/celc.201801543 Siyu Yu 1, 2 , Jing Xu 1 , Hiromitsu Kato 3 , Nianjun Yang 1 , Anna Schulte 4 , Holger Schönherr 4 , Xin Jiang 1
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Heavily phosphorus‐doped nanocrystalline diamond (P‐NCD) has been grown by using a plasma‐enhanced chemical vapor deposition technique and further applied as an electrode for the construction of supercapacitors. This P‐NCD electrode shows a capacitance of 11.40 μF cm−2 in 1.0 M Na2SO4 at a scan rate of 10 mV s−1 and behaves as a n‐type semiconductor electrode in redox‐active electrolyte of 0.05 M Fe(CN)63−/4−+1.0 M Na2SO4. The post‐thermal treatment of as‐grown P‐NCD films in vacuum at high temperatures for several hours leads to the achievement of much higher capacitances. At the scan rates of 10 and 20 mV s−1, the capacitances are up to 2.01 and 63.56 mF cm−2 for an electrical double layer capacitor and a pseudocapacitor, respectively. Such high capacitances originate from the improved electrical conductivity, varied surface state and surface functional groups, and changed content of non‐carbon diamond inside the P‐NCD films during the annealing treatment. Therefore, P‐NCD films are quite promising as an electrode material for supercapacitor applications.
中文翻译：
用于超级电容器的磷掺杂纳米晶金刚石
磷掺杂的纳米晶金刚石（P-NCD）通过使用等离子增强化学气相沉积技术生长而成，并进一步用作构建超级电容器的电极。该P‐NCD电极在1.0 M Na 2 SO 4中的扫描速率为10 mV s -1时显示出11.40μFcm -2的电容，并且在0.05 M Fe（CN ）6 3− / 4− +1.0 M Na 2 SO 4。在真空中于高温下对成膜的P-NCD薄膜进行后热处理数小时，可以实现更高的电容。在10和20 mV s -1的扫描速率下，对于双电层电容器和伪电容器，电容分别高达2.01和63.56 mF cm -2。如此高的电容源于改善的电导率，变化的表面状态和表面官能团，以及在退火处理过程中P-NCD膜内部非碳金刚石含量的变化。因此，P‐NCD膜作为超级电容器应用的电极材料非常有前途。
更新日期：2018-12-19
中文翻译：
用于超级电容器的磷掺杂纳米晶金刚石
磷掺杂的纳米晶金刚石（P-NCD）通过使用等离子增强化学气相沉积技术生长而成，并进一步用作构建超级电容器的电极。该P‐NCD电极在1.0 M Na 2 SO 4中的扫描速率为10 mV s -1时显示出11.40μFcm -2的电容，并且在0.05 M Fe（CN ）6 3− / 4− +1.0 M Na 2 SO 4。在真空中于高温下对成膜的P-NCD薄膜进行后热处理数小时，可以实现更高的电容。在10和20 mV s -1的扫描速率下，对于双电层电容器和伪电容器，电容分别高达2.01和63.56 mF cm -2。如此高的电容源于改善的电导率，变化的表面状态和表面官能团，以及在退火处理过程中P-NCD膜内部非碳金刚石含量的变化。因此，P‐NCD膜作为超级电容器应用的电极材料非常有前途。
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