Highly Luminescent and Stable Si‐Based CsPbBr3 Quantum Dot Thin Films Prepared by Glow Discharge Plasma with Real‐Time and In Situ Diagnosis,Advanced Functional Materials

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Highly Luminescent and Stable Si‐Based CsPbBr3 Quantum Dot Thin Films Prepared by Glow Discharge Plasma with Real‐Time and In Situ Diagnosis
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-10-16 , DOI: 10.1002/adfm.201805214
Zhenxu Lin ₁ , Rui Huang ₁ , Wenxing Zhang ₁ , Yi Zhang ₁ , Jie Song ₁ , Hongliang Li ₁ , Dejian Hou ₁ , Yanqing Guo ₁ , Chao Song ₁ , Neng Wan ₂ , Paul K. Chu ₃

Affiliation

Although all‐inorganic perovskite quantum dots (QDs) have outstanding optoelectronic properties, they tend to have poor stability in air and water, at high temperatures, and under light irradiation. Herein, a glow discharge plasma process incorporating real‐time and in situ diagnosis is designed for efficient encapsulation to improve the stability of CsPbBr₃ QD films. An ammonia/silane plasma which has less destructive effects on CsPbBr₃ QDs is used in plasma‐enhanced chemical vapor deposition to produce a‐SiN_x:H on the CsPbBr₃ QDs. The a‐SiN_x:H encapsulating layers endow CsPbBr₃ QDs with long‐term stability during exposure to air, at a high temperature (205 °C), and in water. In contrast to severe degradation of pure CsPbBr₃ QDs under UV illumination, the CsPbBr₃ QDs/a‐SiN_x:H films show more than 5‐folds increase in photoluminescence intensity after UV illumination for 80 d and long‐term stability is observed after UV illumination for 140 d. The plasma treatment not only stabilizes CsPbBr₃ QDs, but enhances photoluminescence efficiency by combining with illumination as well. The nanocomposite films assembled into commercial InGaN chips feature strong cold white emission. Our results reveal a practical way to design and fabricate highly luminescent as well as stable Si‐based CsPbBr₃ QD films for future development of optoelectronic devices.

中文翻译：

辉光放电等离子体制备的高发光且稳定的基于Si的CsPbBr3量子点薄膜，具有实时和原位诊断功能

尽管全无机钙钛矿量子点（QD）具有出色的光电性能，但它们在空气和水中，高温和光照下的稳定性往往较差。本文中，结合实时和原位诊断的辉光放电等离子体工艺旨在进行有效封装，从而提高CsPbBr ₃ QD薄膜的稳定性。这对CsPbBr较少破坏作用的氨/硅烷等离子体₃的QD是在等离子体增强型化学气相沉积中使用，以产生型SiN _X：H在CsPbBr ₃的QD。a-SiN _x：H封装层赋予CsPbBr ₃QD在暴露于空气，高温（205°C）和水中期间具有长期稳定性。与纯CsPbBr ₃ QD在UV照射下严重降解相反，CsPbBr ₃ QDs / a-SiN _x：H膜在UV照射80 d后显示的光致发光强度增加了5倍以上，并且观察到长期稳定性紫外线照射140 d。等离子体处理不仅可以稳定CsPbBr ₃ QD，而且还可以通过结合照明来提高光致发光效率。组装到商用InGaN芯片中的纳米复合薄膜具有强烈的冷白光发射特性。我们的结果揭示了一种设计和制造高发光以及稳定的基于Si的CsPbBr ₃的实用方法。用于光电设备未来发展的QD胶片。

更新日期：2018-10-16

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