We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO₃)₂. The effect of Cu(NO₃)₂ concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO₃)₂ concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K⁻¹ at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound.

我们报告了从含水硝酸电解液中电解沉积的硒化铜铋碲化硒铜薄膜的研究的第一个结果，该电解液包含高达2 mM的Cu（NO ₃）₂。通过扫描电子显微镜，能量色散X射线能谱，X射线衍射以及塞贝克和霍尔效应测量，研究了Cu（NO ₃）₂浓度对硒化铋碲薄膜的组成，结构和热电性能的影响。发现浓度为1.5 mM的Cu（NO ₃）₂提供的塞贝克系数高达-390μVK ^-1 在室温下，这是迄今为止电沉积铋碲化合物的最高报道。