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Surface Reconstruction of Germanium: Hydrogen Intercalation and Graphene Protection
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-09-20 , DOI: 10.1021/acs.jpcc.8b04965 Dechun Zhou 1 , Zhiqiang Niu 2 , Tianchao Niu 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-09-20 , DOI: 10.1021/acs.jpcc.8b04965 Dechun Zhou 1 , Zhiqiang Niu 2 , Tianchao Niu 1
Affiliation
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Understanding the interfacial properties of functional nanomaterials on semiconductor surfaces is crucial for developing electronics, optoelectronics, and other devices. By using graphene on the germanium (110) surface as a model, we performed scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) to examine the surface reconstructions of Ge (110) under graphene. Two reconstructions, the (1 × 1) phase (R2) which was previously proposed to survive only at high temperature and a 
superstructure (R1 phase), were determined based on atomically resolved STM images. The R2 phase will transform to R1 after annealing in UHV above 300 °C, while the R1 phase can reversibly change to the (1 × 1) phase after heating in hydrogen at 700 °C. Finally, we confirmed the presence of interfacial hydrogen that stabilized the (1 × 1) phase at the initial stage of graphene growth based on control experiments. The zigzag edge of graphene is perpendicular to the close-packed [1–10] direction of Ge(110) which ensures the unidirectional growth of graphene seeds for final merging into single crystal.
中文翻译：
锗的表面重建：氢嵌入和石墨烯保护
了解半导体表面上功能纳米材料的界面特性对于开发电子，光电和其他设备至关重要。通过使用锗（110）表面上的石墨烯作为模型，我们执行了扫描隧道显微镜（STM）和X射线光电子能谱（XPS）来研究石墨烯下Ge（110）的表面重构。先前提出仅在高温和高温下才能生存的两种重构，即（1×1）相（R2）。上层结构（R1相）是根据原子分辨的STM图像确定的。在高于300°C的超高压下退火后，R2相将转变为R1，而在700°C的氢气中加热后，R1相可以可逆地转变为（1×1）相。最后，基于对照实验，我们确认了在石墨烯生长的初始阶段稳定（1×1）相的界面氢的存在。石墨烯的锯齿形边缘垂直于Ge（110）的密堆积[1-10]方向，可确保石墨烯晶种的单向生长，以最终合并成单晶。
更新日期：2018-09-21
superstructure (R1 phase), were determined based on atomically resolved STM images. The R2 phase will transform to R1 after annealing in UHV above 300 °C, while the R1 phase can reversibly change to the (1 × 1) phase after heating in hydrogen at 700 °C. Finally, we confirmed the presence of interfacial hydrogen that stabilized the (1 × 1) phase at the initial stage of graphene growth based on control experiments. The zigzag edge of graphene is perpendicular to the close-packed [1–10] direction of Ge(110) which ensures the unidirectional growth of graphene seeds for final merging into single crystal.
中文翻译：
锗的表面重建：氢嵌入和石墨烯保护
了解半导体表面上功能纳米材料的界面特性对于开发电子，光电和其他设备至关重要。通过使用锗（110）表面上的石墨烯作为模型，我们执行了扫描隧道显微镜（STM）和X射线光电子能谱（XPS）来研究石墨烯下Ge（110）的表面重构。先前提出仅在高温和高温下才能生存的两种重构，即（1×1）相（R2）。
上层结构（R1相）是根据原子分辨的STM图像确定的。在高于300°C的超高压下退火后，R2相将转变为R1，而在700°C的氢气中加热后，R1相可以可逆地转变为（1×1）相。最后，基于对照实验，我们确认了在石墨烯生长的初始阶段稳定（1×1）相的界面氢的存在。石墨烯的锯齿形边缘垂直于Ge（110）的密堆积[1-10]方向，可确保石墨烯晶种的单向生长，以最终合并成单晶。
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