Lanthanide ions have attracted great attention due to their distinct photonic properties. The optoelectronic properties and device performance are greatly affected by the interfacial coupling between the layered van der Waals heterostructure, fabricated with two or more transition metal dichalcogenide (TMD) layers. In this work, lanthanide-doped WS₂/MoS₂ layered heterostructures have been constructed through two synthesis steps. The doped thin films are highly textured nanosheets on wafers. Importantly, the as-prepared heterostructure exhibits efficient near-infrared emission in the range of the telecommunication window, owing to energy transfer between lanthanide ions in the two TMD layers. The use of the layered heterostructure allows the decrease of deleterious cross-relaxation due to homogeneous doping or concentration quenching. The energy transfer process was further elaborated in this work. The results suggest that lanthanide ions can effectively extend the emission band of TMD thin films and their heterostructures. The doped TMD heterostructure is highly favourable for constructing atomically thin near-infrared photonic devices.

镧系元素离子由于其独特的光子特性而备受关注。光电范围和器件性能受分层范德华异质结构之间的界面耦合影响，该结构由两层或更多层过渡金属二卤化钨（TMD）层制成。在这项工作中，掺杂镧系元素的WS ₂ / MoS ₂已经通过两个合成步骤构造了层状异质结构。掺杂的薄膜是晶片上的高度纹理化的纳米片。重要的是，由于两个TMD层中镧系元素离子之间的能量转移，所制备的异质结构在电信窗口范围内表现出有效的近红外发射。分层异质结构的使用允许减少由于均匀掺杂或浓度猝灭而造成的有害的交叉松弛。在这项工作中进一步阐述了能量转移过程。结果表明，镧系离子可以有效地扩展TMD薄膜的发射带及其异质结构。掺杂的TMD异质结构对于构造原子薄的近红外光子器件非常有利。