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Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-01-01 , DOI: 10.1002/admi.201901665 Kasturi Gogoi 1 , Sabyasachi Pramanik 2, 3 , Arun Chattopadhyay 1, 2
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-01-01 , DOI: 10.1002/admi.201901665 Kasturi Gogoi 1 , Sabyasachi Pramanik 2, 3 , Arun Chattopadhyay 1, 2
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Ambipolar transport characteristics of thin film transistors fabricated from nontoxic white light emitting quantum dot complexes (QDCs) are herein reported to exhibit efficient carrier mobilities. The QDCs are synthesized by forming bluish green emitting zinc quinolate complex on the surface of orange emitting Mn2+‐doped ZnS quantum dots (Qdots) using 8‐hydroxyquinoline 5‐sulfonic acid as the chelating ligand. The device exhibits efficient ambipolar transport characteristics with high ION/IOFF ratio of 104 and electron mobility and hole mobility of 2.95 × 10−02 and 1.06 × 10−02 cm2 V−1 s−1, respectively. The subthreshold slope of Qdot complex–integrated thin film transistor increases from that of Mn2+‐doped ZnS Qdot–integrated thin film transistor from 0.35 to 0.79 V dec−1 in p‐field effect transistor (FET) and from 0.59 to 0.97 V dec−1 in n‐FET operations, which annotates an increase in trap state density due to surface complexation of the Qdot. These results suggest that white light emitting QDC can be used as an efficient transport as well as an emissive material, which open up new paradigm for advanced optoelectronic applications.
中文翻译：
薄膜晶体管中表面复杂量子点的电荷传输特性
本文报道了由无毒的发射白光的量子点复合物（QDC）制成的薄膜晶体管的双极传输特性，显示出有效的载流子迁移率。QDC是通过使用8-羟基喹啉5-磺酸作为螯合配体在发射橙色的Mn 2+掺杂的ZnS量子点（Qdots）的表面上形成发蓝绿色的喹啉锌复合物来合成的。该器件具有有效的双极传输特性，I ON / I OFF比率高，为10 4，电子迁移率和空穴迁移率分别为2.95×10 -02和1.06×10 -02 cm 2 V -1 s -1， 分别。Q点复合集成薄膜晶体管的亚阈值斜率从Mn 2+掺杂ZnS Qdot集成薄膜晶体管的亚阈值斜率在p场效应晶体管（FET）的0.35 V下降至0.79 V dec -1，从0.59上升至0.97 V dec -1在n-FET操作中，这说明由于Qdot的表面络合而导致的陷阱态密度增加。这些结果表明，发射白光的QDC既可以用作有效的传输材料，又可以用作发光材料，这为高级光电应用开辟了新的范例。
更新日期：2020-01-01
中文翻译：
薄膜晶体管中表面复杂量子点的电荷传输特性
本文报道了由无毒的发射白光的量子点复合物（QDC）制成的薄膜晶体管的双极传输特性，显示出有效的载流子迁移率。QDC是通过使用8-羟基喹啉5-磺酸作为螯合配体在发射橙色的Mn 2+掺杂的ZnS量子点（Qdots）的表面上形成发蓝绿色的喹啉锌复合物来合成的。该器件具有有效的双极传输特性，I ON / I OFF比率高，为10 4，电子迁移率和空穴迁移率分别为2.95×10 -02和1.06×10 -02 cm 2 V -1 s -1， 分别。Q点复合集成薄膜晶体管的亚阈值斜率从Mn 2+掺杂ZnS Qdot集成薄膜晶体管的亚阈值斜率在p场效应晶体管（FET）的0.35 V下降至0.79 V dec -1，从0.59上升至0.97 V dec -1在n-FET操作中，这说明由于Qdot的表面络合而导致的陷阱态密度增加。这些结果表明，发射白光的QDC既可以用作有效的传输材料，又可以用作发光材料，这为高级光电应用开辟了新的范例。
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