Abstract Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, SbZn-2VZn complexes in all probability. On the other hand, Sb doping caused more native and impurity donors in Sb-doped ZnO nanowires. Then, field effect transistors of single Sb-doped ZnO nanowire were fabricated and the transport properties shows n-type conductivity. The competition between shallow acceptors and donors, and the influence of Sb valency need to be investigated further to obtain stable Sb-doped p-type ZnO. At last, we have shown the potential application of Sb-doped ZnO nanowires for nanoscale UV photodetector.

中文翻译：

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Sb掺杂ZnO纳米线的合成、表征和紫外光电探测器应用

摘要 采用化学气相沉积法合成了六方纤锌矿结构的Sb掺杂ZnO纳米线，Sb掺杂剂的主要电荷态为Sb5+。光致发光光谱表明，很可能存在浅受体 SbZn-2VZn 配合物。另一方面，Sb 掺杂在 Sb 掺杂的 ZnO 纳米线中导致更多的天然和杂质施主。然后，制备了单条 Sb 掺杂的 ZnO 纳米线的场效应晶体管，其传输特性显示出 n 型导电性。需要进一步研究浅受主和施主之间的竞争以及 Sb 价态的影响，以获得稳定的 Sb 掺杂 p 型 ZnO。最后，我们展示了 Sb 掺杂的 ZnO 纳米线在纳米级紫外光电探测器中的潜在应用。