Abstract Modulation of the electrical properties of graphene is of significant importance in advancing graphene electronics: it can be achieved by a Fermi level shift induced by electron acceptor/donor doping. Suitable doping methods involving low-temperature processes and offering long-term stability are imperative to practical applications for such materials. Here, we demonstrate a two-step chemical vapor deposition (CVD) technique for direct synthesis of N-doped graphene film from a pyridine feed-stock at 300 °C under ambient pressure. We extended the synthesis—classified into nucleation and lateral growth steps—by controlling the carbon partial pressure in the processing gases. This led to large-area, continuous N-doped graphene films of excellent quality with full surface coverage: for example, a film size of 2 in2, optical transmittance of 97.6%, and electron mobility of 1400 cm2 V−1 s−1. Our modified CVD method is expected to facilitate the direct synthesis of N-doped graphene in device manufacturing processes toward practical applications while keeping the underlying devices intact.

中文翻译：

---

通过两步化学气相沉积由吡啶合成的高质量氮掺杂石墨烯薄膜

摘要 石墨烯电学性质的调制对于推进石墨烯电子学具有重要意义：它可以通过电子受体/供体掺杂引起的费米能级位移来实现。涉及低温工艺并提供长期稳定性的合适掺杂方法对于此类材料的实际应用是必不可少的。在这里，我们展示了一种两步化学气相沉积 (CVD) 技术，用于在环境压力下在 300°C 下从吡啶原料直接合成 N 掺杂石墨烯薄膜。我们通过控制处理气体中的碳分压来扩展合成——分为成核和横向生长步骤。这导致了大面积、连续的 N 掺杂石墨烯薄膜，具有全表面覆盖的优良品质：例如，薄膜尺寸为 2 平方英寸，光学透射率为 97.6%，电子迁移率为 1400 cm2 V-1 s-1。我们改进的 CVD 方法有望促进 N 掺杂石墨烯在器件制造过程中的直接合成，从而实现实际应用，同时保持底层器件的完整性。