This study deals with the fabrication and characterization of silicon nanoparticles in a SiNx dielectric matrix to have thin films of different gap energies, films essentially based on silicon. Hydrogenated silicon-rich nitride films SiNx:H with different stoichiometry X = N/Si were grown on Si substrate using industrial low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD). Optical, electrical, and structural properties of the obtained films have been studied after rapid thermal annealing at 950 °C. The GIXRD and Raman analysis demonstrate that the films contain simultaneously the hexagonal β-Si3N4 phase and crystalline silicon nanoparticles and the average size of silicon nanocrystallites is within the range of 2.5–11 nm according to the stoichiometry. A strong visible photoluminescence (PL) can be observed in silicon nitride and the evolution of PL with the NH3/SiH4 ratio is correlated with the evolution of the structure. The layers having a luminescence in the visible region present a photocurrent (PC) in the high-energy region. PC spectroscopy has clearly demonstrated the existence of increased absorption on the high-energy side associated with Si-Ncs and confirms the potential of Si-Ncs for photovoltaic applications.

中文翻译：

---

不同化学计量比的富硅SiNx的光学结构特性

本研究涉及在 SiNx 介电基质中制造和表征硅纳米粒子，以具有不同间隙能量的薄膜，这些薄膜主要基于硅。使用工业低频等离子体增强化学气相沉积 (LF-PECVD) 在 Si 衬底上生长具有不同化学计量比 X = N/Si 的氢化富硅氮化物薄膜 SiNx:H。在 950 °C 下快速热退火后，对所得薄膜的光学、电学和结构特性进行了研究。GIXRD 和拉曼分析表明，薄膜同时含有六方 β-Si3N4 相和晶体硅纳米颗粒，根据化学计量学，硅纳米晶的平均尺寸在 2.5-11 nm 范围内。在氮化硅中可以观察到强烈的可见光致发光 (PL)，并且 PL 随 NH3/SiH4 比率的演变与结构的演变相关。在可见光区发光的层在高能区呈现光电流(PC)。PC 光谱已经清楚地证明了与 Si-Ncs 相关的高能侧吸收增加的存在，并证实了 Si-Ncs 在光伏应用中的潜力。