In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111).,ACS Nano

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In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111).
ACS Nano ( IF 15.8 ) Pub Date : 2020-01-07 , DOI: 10.1021/acsnano.9b09067
Pedro Arias ₁ , Jan Tesař ₂ , Abby Kavner ₃ , Tomáš Šikola _{2,

4} , Suneel Kodambaka ₁

Affiliation

Using a combination of in situ ultrahigh-vacuum variable-temperature scanning tunneling microscopy, ex situ Raman spectroscopy, and scanning electron microscopy, we investigated the growth of graphene using benzene on Pd(111) at temperatures up to 1100 K. Benzene adsorbs readily on Pd(111) at room temperature and forms an ordered superstructure upon annealing at 473 K. Exposure to benzene at 673 K enhances Pd step motion and yields primarily amorphous carbon upon cooling to room temperature. Monolayer graphene domains, 10-30 nm in size, appear during annealing this sample at 873 K. Dosing benzene at 1100 K results in graphene domains with varying degrees of crystallinity, while post-deposition annealing at 1100 K for 1200 s yields monolayer graphene domains larger than 150 × 150 nm2. Our results, which indicate that graphene growth on Pd(111) using benzene requires deposition/annealing temperatures higher than 673 K, are in striking contrast with the reported growth of graphene using benzene at temperatures as low as 373 K on relatively inert Cu surfaces.

中文翻译：

使用苯在Pd（111）上生长石墨烯的原位可变温度扫描隧道显微镜研究。

结合使用原位超高真空可变温度扫描隧道显微镜，非原位拉曼光谱和扫描电子显微镜，我们研究了苯在高达1100 K的温度下使用苯在Pd（111）上石墨烯的生长。 Pd（111）在室温下，在473 K退火时形成有序的上部结构。在673 K下暴露于苯会增强Pd的阶跃运动，冷却至室温后主要生成无定形碳。该样品在873 K退火时会出现尺寸为10-30 nm的单层石墨烯结构域。在1100 K下计量添加苯会导致石墨烯结构域具有不同程度的结晶度，而在1100 K下进行1200 s的沉积后退火会得到单层石墨烯结构域大于150×150 nm2。我们的结果

更新日期：2020-01-07

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