Abstract A cost-effective successive ionic layer adsorption and reaction (SILAR) method was used to deposit copper (I) thiocyanate (CuSCN) thin films on glass and steel substrates for this study. The deposited thin films were characterized for their structural, morphological, optical and electrochemical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy and VersaSTAT potentiostat. A direct band gap of 3.88 eV and 3.6 eV with film thickness of 0.7 μm and 0.9 μm was obtained at 20 and 30 deposition cycles respectively. The band gap, microstrain, dislocation density and crystal size were observed to be thickness dependent. The specific capacitance of the CuSCN thin film electrode at 20 mV/s was 760 F g −1 for deposition 20 cycles and 729 F g −1 for deposition 30 cycles.

中文翻译：

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溶液沉积 CuSCN 薄膜的研究：结构、电化学、光学特性

摘要 本研究采用经济高效的连续离子层吸附和反应 (SILAR) 方法在玻璃和钢基材上沉积硫氰酸铜 (I) 薄膜。使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、紫外-可见光谱和 VersaSTAT 恒电位仪对沉积的薄膜的结构、形态、光学和电化学性质进行了表征。分别在 20 和 30 次沉积循环时获得了 3.88 eV 和 3.6 eV 的直接带隙，膜厚分别为 0.7 μm 和 0.9 μm。观察到带隙、微应变、位错密度和晶体尺寸与厚度有关。CuSCN 薄膜电极在 20 mV/s 时的比电容为 760 F g -1 沉积 20 次循环和 729 F g -1 沉积 30 次循环。