Poly(vinylidene fluoride) (PVDF)–based polymer composites filled with high–permittivity La_1.5Sr_0.5NiO₄ (LSNO) particles have been fabricated to produce a composite material with excellent dielectric performance and good mechanical flexibility. Micro–sized (μLSNO) and nano–sized LSNO (nLSNO) particles are used separately as fillers. The dielectric properties of the composites are determined by their particle sizes, resultant interfacial area, and the interparticle distances between the LSNO particles. The percolation threshold of the nLSNO/PVDF composite is lower than that of the μLSNO/PVDF composite. A greatly enhanced dielectric response with a high ε′ ≈ 565.9 at 1 kHz and room temperature and an effectively suppressed low loss tangent (tanδ ≈ 0.28) are obtained in the nLSNO/PVDF composite with a filler volume fraction of 30 vol %. The greatly enhanced ε′ value of nLSNO/PVDF can be explained by a combination of the interfacial polarization at the semiconducting nLSNO–insulating PVDF interfaces, an intrinsically giant ε′ response in nLSNO particles, and shorter interparticle distances between nLSNO particles in the PVDF matrix, while the retained low tanδ value is primarily attributed to the formation of a micro–capacitor microstructure.

填充有高介电常数La _1.5 Sr _0.5 NiO ₄（LSNO）颗粒的聚偏二氟乙烯（PVDF）基聚合物复合材料已经制成，可以生产出具有优异介电性能和良好机械柔韧性的复合材料。微尺寸（μ LSNO）和纳米尺寸LSNO（Ñ LSNO）颗粒作为填料单独使用。复合材料的介电性能取决于它们的粒径，最终的界面面积以及LSNO颗粒之间的颗粒间距离。n LSNO / PVDF复合材料的渗透阈值低于μLSNO / PVDF复合材料。在填充体积分数为30 vol％的n LSNO / PVDF复合材料中，获得了大大增强的介电响应，在1 kHz和室温下具有高ε'≈565.9，并且有效抑制了低损耗角正切（tanδ≈0.28）。大大增强ε'的值ñ LSNO / PVDF可以通过界面极化的组合在所述半导体进行说明Ñ响应LSNO绝缘PVDF接口，固有巨ε' Ñ LSNO颗粒之间，以及更短的间距离Ñ LSNO颗粒在PVDF基质中，保留的低tanδ值主要归因于微电容器微结构的形成。