This paper describes the design and operation of a compact surface wave plasma source for remote plasma processing [i.e., plasma enhanced chemical vapor deposition chamber cleaning, dry etching (SiO2, Si3N4, and silicon), photoresist stripping (SU-8), and decapsulation of microchips]. In order to get higher radical generation and increased industrial throughput, the source is designed to generate plasma at a high flowrate. The source is designed to be compact so that it can be more beneficial in the case of positioning multiple sources on a large processing chamber for faster radical cleaning with better uniformity. The source can operate from low to high flowrates (i.e., 100 SCCM H2 or 10 slm NF3) and provide high decomposition rates for NF3. The etching rate for SiO2 (higher than 450 nm/min) is achieved with 2.5 kW microwave power and 3-5 slm. The key advantages of the source are compactness, higher microwave coupling due to indirect water-cooling, and thereby high operating flow and decomposition rates.

中文翻译：

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用于远程等离子清洗的紧凑型水冷表面波等离子源

本文介绍了用于远程等离子体处理的紧凑型表面波等离子体源的设计和操作 [即等离子体增强化学气相沉积室清洁、干法蚀刻（SiO2、Si3N4 和硅）、光刻胶剥离 (SU-8) 和开封微芯片]。为了获得更高的自由基生成和增加工业吞吐量，该源设计为以高流速产生等离子体。该源设计为紧凑型，因此在将多个源放置在大型处理室上的情况下更有利，以实现更快的自由基清洁和更好的均匀性。该源可以从低流量到高流量（即 100 SCCM H2 或 10 slm NF3）运行，并为 NF3 提供高分解率。SiO2 的蚀刻速率（高于 450 nm/min）是在 2.5 kW 微波功率和 3-5 slm 下实现的。