Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and compared with the experimental data.Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and compared with the experimental data.

中文翻译：

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近紫外增强型 4H-SiC 肖特基二极管

报道了具有厚 i 区的碳化硅肖特基二极管。与先前报道的 pin 光电二极管相比，观察到吸收峰从 270 nm 移至 350 nm。对肖特基二极管的响应曲线进行建模并与实验数据进行比较。报道了具有厚 i 区的碳化硅肖特基二极管。与先前报道的 pin 光电二极管相比，观察到吸收峰从 270 nm 移至 350 nm。肖特基二极管的响应曲线被建模并与实验数据进行比较。