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In-situ stress modulated ferroelectric photovoltaic effect in cluster-assembled TbFe2/Bi5Ti3FeO15 heterostructural films
Applied Physics Letters ( IF 3.5 ) Pub Date : 2019-12-23 , DOI: 10.1063/1.5129543
Yulong Bai 1 , Bo Yang 1, 2 , Shifeng Zhao 1
Affiliation  

TbFe2/Bi5Ti3FeO15 heterostructural films were prepared by inserting cluster-assembled TbFe2 microdiscs into a Bi5Ti3FeO15 matrix using low energy cluster beam deposition combined with sol-gel methods. The phase structure, ferroelectric properties, bandgap, photovoltaic spectral response, and performances of the ferroelectric photovoltaic effect were modulated by the in situ stress driven by magnetostriction of TbFe2 clusters under external magnetic fields. The short-circuit current, open-circuit voltage, and power conversation efficient increase with the in situ stress, reaching 0.026 mA/cm2, 9.5 V, and 5.88 × 10−2%, respectively, under a maximum in-stress of 0.075 GPa. So the high open-circuit voltage above bandgap is attributed to the distinct bandgap shifting and the effective separation of photogenerated electron-hole pairs derived from the in situ stress induced large built-in field. The in situ stress dominated symmetry breaking contributes to the improvement of the power conversation coefficient. The in situ dynamic internal stress provides a high efficient approach to modulate and improve ferroelectric photovoltaic effects.TbFe2/Bi5Ti3FeO15 heterostructural films were prepared by inserting cluster-assembled TbFe2 microdiscs into a Bi5Ti3FeO15 matrix using low energy cluster beam deposition combined with sol-gel methods. The phase structure, ferroelectric properties, bandgap, photovoltaic spectral response, and performances of the ferroelectric photovoltaic effect were modulated by the in situ stress driven by magnetostriction of TbFe2 clusters under external magnetic fields. The short-circuit current, open-circuit voltage, and power conversation efficient increase with the in situ stress, reaching 0.026 mA/cm2, 9.5 V, and 5.88 × 10−2%, respectively, under a maximum in-stress of 0.075 GPa. So the high open-circuit voltage above bandgap is attributed to the distinct bandgap shifting and the effective separation of photogenerated electron-hole pairs derived from the in situ stress induced large built-in field. The in situ stress dominated symmetry breaking contributes to the improvement of the power conversation coefficient. T...

中文翻译:

簇组装TbFe2/Bi5Ti3FeO15异质结构薄膜中的原位应力调制铁电光伏效应

TbFe2/Bi5Ti3FeO15 异质结构薄膜是通过将簇组装的 TbFe2 微盘插入 Bi5Ti3FeO15 基质中,使用低能簇束沉积结合溶胶-凝胶方法制备的。铁电光伏效应的相结构、铁电特性、带隙、光伏光谱响应和性能受外部磁场下 TbFe2 簇的磁致伸缩驱动的原位应力调制。短路电流、开路电压和电源转换效率随着原位应力的增加而增加,分别达到 0.026 mA/cm2、9.5 V 和 5.88 × 10−2%,最大内应力为 0.075 GPa . 因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。原位动态内应力为调节和改善铁电光伏效应提供了一种高效的方法。TbFe2/Bi5Ti3FeO15异质结构薄膜是通过将簇组装的TbFe2微盘插入Bi5Ti3FeO15基体中,采用低能簇束沉积结合溶胶-凝胶方法制备的。相结构、铁电特性、带隙、光伏光谱响应、铁电光伏效应的性能和性能受外部磁场下 TbFe2 簇的磁致伸缩驱动的原位应力的调节。短路电流、开路电压和电源转换效率随着原位应力的增加而增加,分别达到 0.026 mA/cm2、9.5 V 和 5.88 × 10−2%,最大内应力为 0.075 GPa . 因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。天... 和功率转换效率随着原位应力的增加而增加,在 0.075 GPa 的最大内应力下分别达到 0.026 mA/cm2、9.5 V 和 5.88 × 10−2%。因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。天... 和功率转换效率随着原位应力的增加而增加,在 0.075 GPa 的最大内应力下分别达到 0.026 mA/cm2、9.5 V 和 5.88 × 10−2%。因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。天... 因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。天... 因此,带隙以上的高开路电压归因于明显的带隙偏移和来自原位应力诱导的大内置场的光生电子 - 空穴对的有效分离。原位应力主导的对称破坏有助于提高功率转换系数。天...
更新日期:2019-12-23
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