In this letter, the suppression of dynamic on-state resistance (RON) degradation for faster dynamic RON recovery is achieved by the multimesa-channel (MMC) structure in AlGaN/GaN high electron mobility transistors. The measurement results are discussed with the physical mechanisms investigated. The initial transient RON degradation is reduced in the MMC structure, resulting from the lower peak electric field around the drain-side gate edge in the trigate structure compared to that in a planar device. The faster dynamic RON recovery in MMC devices is attributed to the quick emission of electrons at sidewall traps of shallower energy levels. The energy levels of dominant traps at the sidewall and top interfaces are found to be 0.26 eV and 0.37 eV below the conduction band edge, respectively, verified by Technology Computer Aided Design simulations in agreement with the measurement data.

中文翻译：

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AlGaN/GaN高电子迁移率晶体管中多台面沟道抑制动态电阻退化的物理机制

在这封信中，AlGaN/GaN 高电子迁移率晶体管中的多台面沟道 (MMC) 结构可抑制动态导通电阻 (RON) 退化，从而实现更快的动态 RON 恢复。测量结果与所研究的物理机制进行了讨论。与平面器件相比，三栅极结构中漏极侧栅极边缘周围的峰值电场较低，因此 MMC 结构中的初始瞬态 RON 退化有所减少。MMC 器件中更快的动态 RON 恢复归因于在较浅能级的侧壁陷阱处快速发射电子。发现侧壁和顶部界面的主要陷阱的能级分别在导带边缘下方 0.26 eV 和 0.37 eV，