Abstract Surface morphology of InAs1-x-ySbxPy epilayers grown by liquid phase epitaxy has been studied, which has two typical patterns: crosshatch pattern and shiny uniform pattern, depending on the lattice mismatch between the epilayer and the substrate. Two kinds of micro-defects of globules and hillocks appear in the above two patterns. Although lower temperature growth can eliminate both globules and hillocks, it also brings a problem that the band gap of InAs1-x-ySbxPy alloy is not high due to the low P composition. Our study shows that globules and hillocks have no effects on the crystalline quality and compositional uniformity of InAs1-x-ySbxPy epilayers.

中文翻译：

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液相外延生长的 InAs1-x-ySbxPy 外延层的表面形貌研究

摘要 研究了液相外延生长的 InAs1-x-ySbxPy 外延层的表面形貌，根据外延层和衬底之间的晶格失配，其具有两种典型的图案：交叉影线图案和闪亮均匀图案。上述两种模式中出现了小球状和小丘状两种微缺陷。虽然较低的温度生长可以消除小球和小丘，但也带来了 InAs1-x-ySbxPy 合金由于 P 成分低导致带隙不高的问题。我们的研究表明，小球和小丘对 InAs1-x-ySbxPy 外延层的结晶质量和成分均匀性没有影响。