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Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2019/12/30 , DOI: 10.1039/c9tc06780a Jinzhuo Xu 1, 2, 3, 4, 5 , Henan Li 2, 3, 4, 5 , Shaofan Fang 1, 2, 3, 4, 5 , Ke Jiang 1, 2, 3, 4, 5 , Huizhen Yao 1, 2, 3, 4, 5 , Feier Fang 1, 2, 3, 4, 5 , Fuming Chen 6, 7, 8, 9, 10 , Ye Wang 5, 11, 12, 13 , Yumeng Shi 1, 2, 3, 4, 5
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2019/12/30 , DOI: 10.1039/c9tc06780a Jinzhuo Xu 1, 2, 3, 4, 5 , Henan Li 2, 3, 4, 5 , Shaofan Fang 1, 2, 3, 4, 5 , Ke Jiang 1, 2, 3, 4, 5 , Huizhen Yao 1, 2, 3, 4, 5 , Feier Fang 1, 2, 3, 4, 5 , Fuming Chen 6, 7, 8, 9, 10 , Ye Wang 5, 11, 12, 13 , Yumeng Shi 1, 2, 3, 4, 5
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Broadband photodetectors are critical to modern industrial systems and scientific applications and have attracted broad attention in recent years. In this paper, high quality single-crystal Bi2S3 nanobelts were prepared by using the chemical vapor deposition (CVD) method. The Bi2S3 nanobelts were further used as photosensitive materials for broadband photo-detection. The as-grown Bi2S3 nanobelts exhibit ultrahigh absorption coefficiency in the ultraviolet (UV) to near infrared (NIR) range. The photodetectors based on a single Bi2S3 nanobelt showed excellent broadband photoresponse performance in the UV to NIR range (from 300 to 1000 nm), including high photoresponsivity up to 201 A W−1, an ultrafast response speed of ∼50 μs, a high external quantum efficiency of 31 140% and a high detectivity of 2.7 × 1010 Jones. The superior performance can be attributed to the ultrahigh absorption coefficiency of Bi2S3 nanobelts, as well as the Schottky contact between the Bi2S3 nanobelt and the Au electrode. The present work suggests that the single-crystal Bi2S3 nanobelts possess great potential for the fabrication of high performance broadband photodetectors.
中文翻译：
高性能宽带光电探测器的硫化铋纳米带的合成
宽带光电探测器对于现代工业系统和科学应用至关重要，并且近年来引起了广泛关注。本文采用化学气相沉积法制备了高质量的Bi 2 S 3单晶纳米带。Bi 2 S 3纳米带进一步用作宽带光检测的光敏材料。成长中的Bi 2 S 3纳米带在紫外（UV）到近红外（NIR）范围内表现出超高的吸收系数。基于单个Bi 2 S 3的光电探测器纳米带在UV至NIR范围（300至1000 nm）中显示出出色的宽带光响应性能，包括高达201 AW -1的高光响应性，约50μs的超快响应速度，31 140％的高外部量子效率和2.7×10 10琼斯的高探测率。优异的性能归因于Bi 2 S 3纳米带的超高吸收系数，以及Bi 2 S 3纳米带与Au电极之间的肖特基接触。目前的工作表明，单晶Bi 2 S 3纳米带具有制造高性能宽带光电探测器的巨大潜力。
更新日期：2020-02-13
中文翻译：
高性能宽带光电探测器的硫化铋纳米带的合成
宽带光电探测器对于现代工业系统和科学应用至关重要，并且近年来引起了广泛关注。本文采用化学气相沉积法制备了高质量的Bi 2 S 3单晶纳米带。Bi 2 S 3纳米带进一步用作宽带光检测的光敏材料。成长中的Bi 2 S 3纳米带在紫外（UV）到近红外（NIR）范围内表现出超高的吸收系数。基于单个Bi 2 S 3的光电探测器纳米带在UV至NIR范围（300至1000 nm）中显示出出色的宽带光响应性能，包括高达201 AW -1的高光响应性，约50μs的超快响应速度，31 140％的高外部量子效率和2.7×10 10琼斯的高探测率。优异的性能归因于Bi 2 S 3纳米带的超高吸收系数，以及Bi 2 S 3纳米带与Au电极之间的肖特基接触。目前的工作表明，单晶Bi 2 S 3纳米带具有制造高性能宽带光电探测器的巨大潜力。
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