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GeSe thin-film solar cells
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2019/12/30 , DOI: 10.1039/c9qm00727j
Shun-Chang Liu 1, 2, 3, 4, 5 , Yusi Yang 1, 2, 3, 4, 5 , Zongbao Li 6, 7, 8, 9, 10 , Ding-Jiang Xue 1, 2, 3, 4, 5 , Jin-Song Hu 1, 2, 3, 4, 5
Affiliation  

Thin-film solar cells made from non-toxic and earth-abundant materials are needed to substitute the current best-developed absorbers such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) due to the toxicity of Cd and scarcity of In and Te. In this aspect, germanium monoselenide (GeSe) satisfies the aforementioned criteria and has recently emerged as a potential replacement. Moreover, GeSe possesses a suitable bandgap of 1.14 eV (optimal for single junction solar cells), high absorption coefficient (>105 cm−1) at a wavelength close to the absorption onset, high hole mobility (128.6 cm2 V−1 s−1), and simple binary composition with fixed orthorhombic phase at room temperature. This review introduces the properties of GeSe with special emphasis on the material, optical and electrical properties, and then summarizes the recent progress of GeSe-based solar cells. Finally, we give guidance on optimizing GeSe thin-film solar cells to their full performance potential, and provide a brief outlook for the further development of GeSe thin-film solar cells.

中文翻译:

GeSe薄膜太阳能电池

由于Cd的毒性和In的稀缺性,需要用无毒且富含地球的材料制成的薄膜太阳能电池来替代目前最先进的吸收器,例如碲化镉(CdTe)和硒化铜铟镓镓(CIGS)。和Te。在这方面,单硒化锗(GeSe)满足上述标准,并且最近已成为潜在的替代品。此外,GeSe具有1.14 eV(单结太阳能电池的最佳)的合适带隙,在接近吸收开始的波长处具有高吸收系数(> 10 5 cm -1),高空穴迁移率(128.6 cm 2 V -1 s)-1)和简单的二元组成,在室温下具有固定的正交相。这篇综述介绍了GeSe的特性,特别着重于材料,光学和电学特性,然后总结了基于GeSe的太阳能电池的最新进展。最后,我们为优化GeSe薄膜太阳能电池的全部性能潜力提供了指导,并为GeSe薄膜太阳能电池的进一步发展提供了简要的展望。
更新日期:2020-03-05
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