A compatible organic/inorganic nanocomposite film for a stretchable resistive memory device with high performance is demonstrated using poly(4-vinylpyridine)-block-poly(propyl methacrylate) (P4VP-b-PPMA) with zinc oxide (ZnO) nanoparticle. The PPMA soft segment is designed for reducing the rigidity of the active layer, while the P4VP block serves as a charge-trapping component to induce conductive filament and also a compatible moiety for inorganic nanoparticles through hydrogen bonding. The experimental results show that the P4VP-b-PPMA-based electrical memory device exhibits write-once-read-many-times memory behavior and an excellent ON/OFF current ratio of over 105 with a stable turn-on voltage (Vset ) around -2.0 V and stable memory behavior upon stretching up to 60% strain. On the other hand, P4VP-b-PPMA/ZnO nanocomposite film switches the memory characteristic to the dynamic random access memory behavior. The stretchable memory device prepared from the nanocomposite film can have a stretching durability over 40% strain and up to 1000 times cycling stretch-relaxation test. This work demonstrates a new strategy using nanocomposite films with tunable electrical characteristics and enhanced mechanical properties for stretchable electrical devices.

中文翻译：

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高性能可拉伸电阻式存储器件的有机-无机纳米复合薄膜。

使用具有氧化锌（ZnO）纳米粒子的聚（4-乙烯基吡啶）-嵌段-聚（甲基丙烯酸丙酯）（P4VP-b-PPMA），证明了具有高性能的可拉伸电阻式存储设备兼容的有机/无机纳米复合膜。PPMA软链段旨在降低活性层的刚性，而P4VP嵌段则用作电荷捕获组分，以诱导导电丝以及通过氢键作用与无机纳米粒子相容的部分。实验结果表明，基于P4VP-b-PPMA的电存储器件具有一次写入，多次读取的存储行为，并且具有超过105的出色的开/关电流比，并且具有稳定的开启电压（Vset）。 -2.0 V且在拉伸至60％应变时具有稳定的记忆行为。另一方面，P4VP-b-PPMA / ZnO纳米复合膜将存储特性转换为动态随机存取存储行为。由纳米复合膜制备的可拉伸存储装置可以具有超过40％应变的拉伸耐久性和高达1000次的循环拉伸松弛测试。这项工作展示了使用具有可调节电学特性和增强的机械性能的可拉伸电子设备的纳米复合薄膜的新策略。