Abstract As the crucial material of photovoltaic field, the development of polysilicon has attracted intense attention on reducing its cost and improving the polysilicon chemical vapor deposition (CVD) performance. Two-dimensional numerical models have been developed to investigate the local heat and mass transfer performance of polysilicon CVD system by introducing wave-like and trapezoid-like obstacles in the gas flow channels. Effects of different channel configurations on the local velocity, temperature, concentrations of six components, Nusselt number (Nu), Sherwood number (Sh) and seven coordinate angles along the flow direction are presented and detailed analyzed. The disturbing obstacles increase both the local and total Nu, as well as Sh. The seven coordinate angles caused by velocity vector, temperature gradient, and concentration gradient increase near the disturbing structures and decrease out of the disturbing obstacles. However, the disturbing obstacles decrease the total intersection angles leading better heat and mass transfer performance. In brief, compared to conventional straight channel, the proposed channels increase the gas flow velocity and, hence, improved the silicon CVD characteristics.

中文翻译：

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多晶硅化学气相沉积反应器不同通道结构的局部传热传质特性

摘要 作为光伏领域的关键材料，多晶硅的开发在降低其成本和提高多晶硅化学气相沉积（CVD）性能方面受到了广泛关注。通过在气流通道中引入波浪形和梯形障碍物，开发了二维数值模型来研究多晶硅 CVD 系统的局部传热和传质性能。介绍并详细分析了不同通道配置对局部速度、温度、六种组分浓度、努塞尔数 (Nu)、舍伍德数 (Sh) 和沿流动方向的七个坐标角的影响。令人不安的障碍增加了局部和总 Nu 以及 Sh。由速度矢量、温度梯度、和浓度梯度在干扰结构附近增加并在干扰障碍之外减小。然而，干扰障碍物减少了总的交叉角，从而导致更好的传热和传质性能。简而言之，与传统的直通道相比，所提出的通道增加了气体流速，从而改善了硅 CVD 特性。