Abstract In this study, nickel oxide (NiOX) thin films were prepared by direct current (DC) reactive magnetron sputtering. The various properties of NiOX thin films including deposition rate, morphology, electrical and optical properties as well as grain structure and chemical composition were systematically investigated. The material properties of NiOX were finely modified under the monitoring of target voltage during sputtering. NiOX thin films were applied as hole transport layers (HTLs) in all-inorganic CsPbI2Br perovskite solar cells (PSCs). The highest efficiency of 12.6% had been achieved for the optimized all-inorganic CsPbI2Br PSCs with the inverted structure of Glass/FTO/NiOX(HTL)/CsPbI2Br/ZnO@C60 (electron transport layer, ETL)/Ag. The PSC still yielded over 90% of its initial power output after 10 h operation without encapsulation.

中文翻译：

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用于全无机 CsPbI2Br 钙钛矿太阳能电池的反应溅射 NiOX 空穴传输层的精细改性

摘要 本研究采用直流（DC）反应磁控溅射法制备氧化镍（NiOX）薄膜。系统地研究了 NiOX 薄膜的各种性质，包括沉积速率、形貌、电学和光学性质以及晶粒结构和化学成分。在溅射过程中，在靶电压的监控下，NiOX 的材料特性得到了精细的改变。NiOX 薄膜被用作全无机 CsPbI2Br 钙钛矿太阳能电池 (PSC) 中的空穴传输层 (HTL)。具有玻璃/FTO/NiOX(HTL)/CsPbI2Br/ZnO@C60（电子传输层，ETL）/Ag倒置结构的优化全无机CsPbI2Br PSCs的最高效率达到了12.6%。在没有封装的情况下运行 10 小时后，PSC 仍然产生超过其初始功率输出的 90%。