Super-Planckian Radiative Heat Transfer between Macroscale Surfaces with Vacuum Gaps Down to 190 nm Directly Created by SU-8 Posts and Characterized by Capacitance Method,ACS Photonics

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Super-Planckian Radiative Heat Transfer between Macroscale Surfaces with Vacuum Gaps Down to 190 nm Directly Created by SU-8 Posts and Characterized by Capacitance Method
ACS Photonics ( IF 6.5 ) Pub Date : 2020-01-03 , DOI: 10.1021/acsphotonics.9b01360
Xiaoyan Ying ₁ , Payam Sabbaghi ₁ , Nicole Sluder ₁ , Liping Wang ₁

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In this work we experimentally demonstrated the near-field thermal radiation enhancement over the blackbody limit by 11 times between highly doped silicon chips with 1 × 1 cm² size at a vacuum gap distance of 190 ± 20 nm under a temperature difference of 74.7 K above room temperature. SU-8 polymer posts, which significantly reduced the conduction below 6% of the total heat transfer due to its low thermal conductivity, were carefully fabricated with different heights to directly create vacuum gaps from 507 ± 47 nm down to 190 ± 20 nm precisely determined in situ by capacitance measurement. Experimental results were validated by theoretical calculations based on fluctuational electrodynamics, which revealed the enhancement mechanism mainly as coupled surface plasmon polaritons. The experimental method developed here will facilitate the potential applications of near-field radiative devices made of electrically conductive materials like metals, graphene, and transparent conductive oxide besides heavily doped semiconductors for thermal energy conversion, radiative thermal rectification, and radiative heat modulation.

中文翻译：

SU-8柱直接产生并通过电容法表征的真空间隙低至190 nm的宏观表面之间的超普朗克辐射热传递

在这项工作中，我们通过实验证明了在1×1 cm ^2的高掺杂硅芯片之间，黑场极限的近场热辐射增强了11倍。在高于室温的74.7 K的温差下，在190±20 nm的真空间隙距离处测量尺寸。SU-8聚合物接线柱由于其低导热率而显着降低了总传热的6％以下的导热率，并精心制作了不同的高度，以直接产生从507±47 nm到190±20 nm精确确定的真空间隙通过电容测量原位测量。实验结果通过基于涨落电动力学的理论计算得到验证，揭示了增强机理主要是耦合的表面等离激元极化子。此处开发的实验方法将促进由导电材料（例如金属，石墨烯，

更新日期：2020-01-04

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