Abstract In this paper, ZnO films were deposited onto flexible polyimide substrate by spraying suspension containing nanocrystals synthesized by polyol method. Afterward, ZnO films were annealed at 200–400 °C for 10–60 min. X-ray diffraction (XRD) technique, scanning, transmission electron and atomic force microscopy, Fourier-transform infrared (FTIR) spectroscopy were used to study the dependencies of phase composition, texture quality, coherent scattering domain (CSD) sizes, microdeformations, microstresses, dislocation densities, lattice parameters, chemical composition on the physico-technical preparation conditions of the obtained ZnO films. The conditions were determined to obtain flexible ZnO films with suitable properties to use in the electronic microdevices.

中文翻译：

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ZnO纳米晶体和沉积在柔性基板上的薄膜的结构、亚结构和化学成分

摘要 本文通过喷涂含有多元醇法合成的纳米晶的悬浮液，在柔性聚酰亚胺基板上沉积ZnO薄膜。之后，ZnO 薄膜在 200-400°C 下退火 10-60 分钟。X 射线衍射 (XRD) 技术、扫描、透射电子和原子力显微镜、傅里叶变换红外 (FTIR) 光谱用于研究相组成、纹理质量、相干散射域 (CSD) 大小、微变形、微应力的相关性、位错密度、晶格参数、化学成分对所得 ZnO 薄膜的物理技术制备条件的影响。确定条件以获得具有适用于电子微器件的特性的柔性 ZnO 薄膜。