CaTiO₃-K₂MoO₄ (CTO-KMO) dielectric composites were successfully cold-sintered at 150 °C for 30 min with a uniaxial pressure of 200 MPa. X-ray diffraction, Raman spectroscopy, back-scattered SEM and energy dispersive x-ray mapping confirmed the coexistence of CTO and KMO with no evidence of interdiffusion and parasitic phases either between the two ceramic end-members or with Ag internal electrodes. As KMO concentration increased, the temperature coefficient of resonant frequency (TCF) and relative pemittivity (ε_r) decreased but the microwave quality factor (Q × f) increased. A near-zero TCF composition was obtained for CTO-0.92KMO composites which exhibited ε_r ∼ 8.5 and Q × f ∼ 11,000 GHz. A microstrip patch antenna was designed and fabricated using cold sintered CTO-0.92KMO as a substrate (40×40×1.4 mm), which gave a s11 of −14.2 dB and a radiation efficiency of 62.0 % at 2.51 GHz.

将CaTiO ₃ -K ₂ MoO ₄（CTO-KMO）介电复合材料成功地在150℃下以200 MPa的单轴压力冷烧结30分钟。X射线衍射，拉曼光谱，反向散射SEM和能量色散X射线映射证实了CTO和KMO并存，没有证据表明两个陶瓷端部件之间或与Ag内部电极之间存在相互扩散和寄生相。作为KMO浓度的增加，共振频率（TCF）和相对pemittivity（温度系数ε _{- [R} ）降低，但微波品质因数（Q×˚F）增加。对于CTO-0.92KMO复合材料，其显示了得到的近零TCF组合物ε _{- [R}约8.5和Q×f约11,000 GHz。使用冷烧结的CTO-0.92KMO作为基板（40×40×1.4 mm）设计和制造了微带贴片天线，该天线的s11为-14.2 dB，在2.51 GHz下的辐射效率为62.0％。