Abstract Doping efficiency and stability are crucial requirements for the integration of doped organic semiconductors in optoelectronic devices. This work presents a detailed experimental study on the air stability of p-doped systems based on a low-bandgap polymer, poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b’)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl) (PBDTTT-c) doped with a strong molecular p-dopant, i.e. molybdenum tris[1-(trifluoroethanoyl)-2-(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd-COCF3)3). The electrical conductivity and the optical absorption are measured for different dopant concentrations in argon atmosphere, and their variations monitored as a function of the air exposure time. The results indicate a clear instability under ambient air related to a dedoping process, which is particularly pronounced in ultra-thin (

中文翻译：

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揭示 p 掺杂钼二硫烯配合物的薄半导体聚合物层中空气不稳定性背后的机制

摘要 掺杂效率和稳定性是掺杂有机半导体在光电器件中集成的关键要求。这项工作对基于低带隙聚合物聚 [(4,8-双-(2-乙基己氧基)-苯并 (1,2-b:4,5) 的 p 掺杂系统的空气稳定性进行了详细的实验研究。 -b')二噻吩)-2,6-二基-alt-(4-(2-乙基己酰基)-噻吩并[3,4-b]噻吩-)-2-6-二基)(PBDTTT-c)强分子p-掺杂剂，即钼三[1-(三氟乙醇酰基)-2-(三氟甲基)乙烷-1,2-二硫烯](Mo(tfd-COCF3)3)。测量氩气氛中不同掺杂剂浓度的电导率和光吸收，并监测它们的变化作为空气暴露时间的函数。结果表明与去掺杂过程相关的环境空气下的明显不稳定性，