Abstract To meet the challenge that Si wafer based industrial n-type solar cells are more complicated to manufacture as compared to producing p-type Si solar cells, a simplified cell fabrication process to make n-type silicon solar cells has been developed in which boron-doped rear emitter and phosphorus-doped front surface field (FSF) are formed in one high-temperature step. By adding a selective FSF structure the conversion efficiency of the n-type solar cells can be further improved. Our proposal enables the doping concentration of the emitter and the FSF to be adjustable independently without affecting the ohmic contacts on both sides. A champion batch conversion efficiency of 22% was obtained by optimizing the contact ratio of the emitter and thermal drive-in duration.

中文翻译：

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具有选择性前表面场和后发射极的双面 n 型硅太阳能电池

摘要 为了应对基于硅片的工业 n 型太阳能电池制造比生产 p 型硅太阳能电池更复杂的挑战，开发了一种简化的电池制造工艺来制造 n 型硅太阳能电池，其中硼掺杂后发射极和磷掺杂前表面场 (FSF) 是在一个高温步骤中形成的。通过添加选择性FSF结构，可以进一步提高n型太阳能电池的转换效率。我们的提议使发射极和 FSF 的掺杂浓度可以独立调节，而不会影响两侧的欧姆接触。通过优化发射极的接触比和热驱动持续时间，获得了 22% 的最佳批量转换效率。