We propose a reverse-strip-structure chalcogenide ${{\rm Ge}_{28}}{{\rm Sb}_{12}}{{\rm Se}_{60}}$ glass waveguide prepared through micro-trench filling and lift-off technique. This fabrication method avoids processes that are directly applied to chalcogenide glass films, such as photolithography and dry etching, thereby yielding waveguides with excellent surface profiles. The nonlinear refractive index (${n_2}$), nonlinear absorption coefficient ($\beta $), and third-order nonlinear susceptibility (${\chi ^3}$) of the ${{\rm Ge}_{28}}{{\rm Sb}_{12}}{{\rm Se}_{60}}$ glass films are estimated by $Z$-scan technique, and excellent nonlinearities were observed. The linear optical losses of the as-prepared waveguide samples with a cross-sectional area of ${3.0}\;\unicode{x00B5}{\rm m}\; \times \;{1.0}\;\unicode{x00B5}{\rm m}$ and ${5.0}\;\unicode{x00B5}{\rm m}\; \times \;{1.0}\;\unicode{x00B5}{\rm m}$ are measured and calculated to be 2.2 and 1.7 dB/cm at 1550 nm, respectively, using the lensed fiber and cut-back method. This study predicts that reverse-strip-structure waveguides based on micro-trench filling and lift-off technique are promising candidates for high-quality on-chip integrated nonlinear optical devices and warrant further research.

中文翻译：

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通过微沟槽填充和剥离制备的反条纹结构Ge ₂₈ Sb ₁₂ Se ₆₀硫族化物玻璃波导

我们提出了一种反向条状硫族化物$ {{\ rm Ge} _ {28}} {{\ rm Sb} _ {12}} {{\ rm Se} _ {60}} $的微波导制备的玻璃波导沟槽填充和提离技术。这种制造方法避免了直接应用于硫族化物玻璃膜的工艺（例如光刻和干法蚀刻），从而产生了具有出色表面轮廓的波导。$ {{\ rm Ge} _ {28的非线性折射率（$ {n_2} $），非线性吸收系数（$ \ beta $）和三阶非线性磁化率（$ {\ chi ^ 3} $）}} {{\ rm Sb} _ {12}} {{\ rm Se} _ {60}} $玻璃膜估计为$ Z $扫描技术，观察到极好的非线性。所制备的横截面为$ {3.0} \; \ unicode {x00B5} {\ rm m} \的波导样本的线性光学损耗。\ times \; {1.0} \; \ unicode {x00B5} {\ rm m} $和$ {5.0} \; \ unicode {x00B5} {\ rm m} \; 使用透镜光纤和切分法测量\ times \; {1.0} \; \ unicode {x00B5} {\ rm m} $，并在1550 nm处分别计算出它们分别为2.2和1.7 dB / cm。这项研究预测，基于微沟槽填充和提离技术的反向条纹结构波导有望成为高质量片上集成非线性光学器件的有希望的候选者，并有待进一步研究。