Abstract Implementing the Silicon-On-Insulator platform, we reveal an approach to fabricate Si nanocrystals on insulator by a single step, wet anisotropic etching of thin crystalline layers. The evolution of the Si layer was investigated from the onset of the dissolution process up to the development of isolated nanocrystals. Our results also provide several insights into the understanding of the early stages of the hillocks formation characteristic for the anisotropic etching of Si(001). We discuss several related mechanisms and we give experimental evidences that support the stabilization of the pyramidal hillocks apices by short-lived silicate particles.

中文翻译：

---

通过湿法各向异性蚀刻在绝缘体上形成硅纳米晶体

摘要 利用绝缘体上硅平台，我们揭示了一种通过单步湿法各向异性蚀刻薄结晶层在绝缘体上制造硅纳米晶体的方法。从溶解过程的开始到孤立的纳米晶体的发展，研究了硅层的演变。我们的结果还为了解 Si(001) 各向异性蚀刻的小丘形成特征的早期阶段提供了一些见解。我们讨论了几种相关机制，并提供了实验证据，支持短寿命硅酸盐颗粒稳定锥体小丘顶点。