Abstract Luminescence spectra of RAlO3:Eu3+ (R = Gd, Tb, Lu, Gd0.6Lu0.4, or Y) single crystalline films grown by liquid phase epitaxy were measured under high pressure in a diamond anvil cell. Pressure application leads to lattice constant changes affecting the intensity ratio of 5D0 –> 7F2 to 5D0 –> 7F1 transitions of the Eu3+ ion (the so-called K-value). In all samples, except LuAP, the K-value was found to decrease with increasing pressure. In the LuAP:Eu/YAG epitaxial structure, in addition to Eu emission, a broad luminescence band was observed at ambient pressure. At high pressure another broadband luminescence appeared, the intensity of which was strongly enhanced at increased pressure. We assign the origin of those bands to defects. The pressure dependence of the luminescence intensity of the defect band correlates with the pressure changes in the K-value. It points to mutual interaction of the defects and dopants in this material.

中文翻译：

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高压对外延 RAlO3（R = Gd、Tb、Lu、Gd0、6Lu0、4 或 Y）单晶薄膜中 Eu3+ 发光的影响

摘要 在金刚石砧室中在高压下测量了通过液相外延生长的 RAlO3:Eu3+ (R = Gd, Tb, Lu, Gd0.6Lu0.4, 或 Y) 单晶薄膜的发光光谱。施加压力会导致晶格常数变化，从而影响 Eu3+ 离子的 5D0 –> 7F2 与 5D0 –> 7F1 跃迁的强度比（所谓的 K 值）。在所有样品中，除了 LuAP，发现 K 值随着压力的增加而降低。在 LuAP:Eu/YAG 外延结构中，除了 Eu 发射外，在环境压力下还观察到宽的发光带。在高压下出现另一种宽带发光，其强度在压力增加时强烈增强。我们将这些带的起源分配给缺陷。缺陷带发光强度的压力依赖性与 K 值的压力变化相关。它指出了该材料中缺陷和掺杂剂的相互作用。