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Influence of high pressure on Eu3+ luminescence in epitaxial RAlO3 (R = Gd, Tb, Lu, Gd0,6Lu0,4, or Y) single crystalline films
Journal of Luminescence ( IF 2.961 ) Pub Date : 2019-12-24 , DOI: 10.1016/j.jlumin.2019.116991
Lev-Ivan Bulyk; Yu Zorenko; V. Gorbenko; Andrzej Suchocki

Luminescence spectra of RAlO3:Eu3+ (R = Gd, Tb, Lu, Gd0.6Lu0.4, or Y) single crystalline films grown by liquid phase epitaxy were measured under high pressure in a diamond anvil cell. Pressure application leads to lattice constant changes affecting the intensity ratio of 5D0 –> 7F2 to 5D0 –> 7F1 transitions of the Eu3+ ion (the so-called K-value). In all samples, except LuAP, the K-value was found to decrease with increasing pressure. In the LuAP:Eu/YAG epitaxial structure, in addition to Eu emission, a broad luminescence band was observed at ambient pressure. At high pressure another broadband luminescence appeared, the intensity of which was strongly enhanced at increased pressure. We assign the origin of those bands to defects. The pressure dependence of the luminescence intensity of the defect band correlates with the pressure changes in the K-value. It points to mutual interaction of the defects and dopants in this material.
更新日期:2019-12-25

 

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