Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories.,The Journal of Physical Chemistry Letters

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Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-01-03 , DOI: 10.1021/acs.jpclett.9b03181
Ankur Solanki _{1,

2} , Antonio Guerrero ₃ , Qiannan Zhang ₁ , Juan Bisquert ₃ , Tze Chien Sum ₁

Affiliation

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications.

中文翻译：

用于非挥发性记忆的Ruddlesden-Pop钙钛矿中有效电阻转换的界面机制。

离子迁移是电流-电压磁滞现象的起源之一，是卤化物钙钛矿光电的祸根。在本文中，我们利用这种不受欢迎的特性来释放使用分层Ruddlesdsen-Popper钙钛矿（RPP）进行电阻转换的新机会，并阐明了潜在的机制。基于RPP的器件的ON / OFF比在很大程度上取决于层数和n̅= 5处的峰值，这表明在1.0 mm2的器件中最高的ON / OFF比约为104，而工作电压最小。即使在60％的相对湿度下也能长时间保留数据，并且稳定的写入/擦除功能证明了其在存储应用中的潜力。阻抗光谱揭示了迁移离子与外部触点之间的化学反应，从而改变了界面处的电荷转移势垒，从而控制了电阻状态。

更新日期：2020-01-04

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