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Plasmon‐Enhanced Photoluminescence and Photocatalysis Reactions in Metal‐Semiconductor Nanomaterials: UV‐Generated Hot Electron in Gold‐Zinc Oxide
ChemPhotoChem ( IF 3.0 ) Pub Date : 2019-12-13 , DOI: 10.1002/cptc.201900252
Issraa Shahine 1 , Safi Jradi 2 , Nour Beydoun 2 , Jean‐Jacques Gaumet 1 , Suzanna Akil 1
Affiliation  

Herein, we introduce a mechanistic study to design a hybrid junction in metallic‐semiconductor (M/SC) nanostructures. UV‐light‐induced hot electron generation in ZnO nanostructures is used to precisely tune the photoluminescence (PL) and photocatalytic (PC) properties in hybrid Au/ZnO nanomaterials. Both enhancement and quenching of the PL and PC functionalities are observed, depending on the properties of the Au nanoparticles (AuNPs) and the Au/ZnO molecular distance. Under UV irradiation free‐ligand AuNPs quench the luminescence of ZnONPs through direct charge transfer (CT) from ZnO to the AuNPs. In contrast, capped AuNPs enhance the ZnO emission through indirect CT from AuNPs to ZnONPs facilitated by the distance created by the CTAB ligand between both constituents of the hybrid systems. It is necessary to optimise the Au/ZnO molecular distance to achieve an enhancement of both the plasmonic photocatalysis reaction and photoelectric properties of M/SC nanostructures. This phenomena is mediated by the energy transfer (ET) from ZnONPs to AuNPs. The resulting PL enhancement is described by the plasmon‐induced resonance energy transfer effect (PIRET effect).

中文翻译:

金属半导体纳米材料中的等离子体增强光致发光和光催化反应:金锌氧化物中紫外线产生的热电子

在这里,我们介绍了一种机制研究,以设计金属半导体(M / SC)纳米结构中的混合结。ZnO纳米结构中紫外光诱导的热电子生成用于精确调整Au / ZnO杂化纳米材料的光致发光(PL)和光催化(PC)特性。根据Au纳米颗粒(AuNPs)的性质和Au / ZnO分子距离,可以观察到PL和PC功能的增强和猝灭。在紫外线照射下,自由配体的AuNPs通过从ZnO到AuNPs的直接电荷转移(CT)猝灭ZnONPs的发光。相反,封端的AuNP通过间接CT从AuNP到ZnONP增强了ZnO的发射,这是由杂化系统两个组成部分之间CTAB配体产生的距离促进的。有必要优化Au / ZnO分子距离,以实现M / SC纳米结构的等离子体光催化反应和光电性能的增强。这种现象是由ZnONPs向AuNPs的能量转移(ET)介导的。由等离子体激元引起的共振能量转移效应(PIRET效应)描述了由此产生的PL增强。
更新日期:2019-12-13
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