Intrinsic anomalous Nernst effect, like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst coefficient and the mean-free path is extensively documented. Here, by studying ${\mathrm{Co}}_3{\mathrm{Sn}}_2{\mathrm{S}}_2$, a topological half-metallic semimetal hosting sizable and recognizable ordinary and anomalous Nernst responses, we demonstrate an anticorrelation between the amplitudes of carrier mobility and the anomalous $S_{xy}^A$ (the ratio of transverse electric field to the longitudinal temperature gradient in the absence of magnetic field). We argue that the observation, paradoxically, establishes the intrinsic origin of the anomalous Nernst effect in this system. We conclude that various intrinsic off-diagonal coefficients are set by the way the Berry curvature is averaged on a grid involving the mean-free path, the Fermi wavelength, and the de Broglie thermal length.

中文翻译：

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半金属半金属中无序放大的本能异常能斯特效应

固有的能斯特效应，与霍尔效应一样，是由固体中电子的贝里曲率产生的。关于它对疾病的反应知之甚少。相反，广泛记录了普通能斯特系数的幅度与无均值路径之间的联系。在这里，通过学习${\mathrm{有限公司}}_3{锡}_{\mathrm{2个}}{\mathrm{小号}}_{\mathrm{2个}}$，拓扑半金属半金属具有相当大且可识别的普通和异常能斯特响应，我们证明了载流子迁移幅度与异常之间存在反相关关系 ${\mathrm{小号}}_{Xÿ}^{\mathrm{一种}}$（在没有磁场的情况下，横向电场与纵向温度梯度之比）。我们认为，矛盾的是，该观察建立了该系统中异常能斯特效应的内在根源。我们得出的结论是，通过将Berry曲率在包含平均自由路径，费米波长和de Broglie热长度的网格上平均的方式来设置各种固有的非对角线系数。