当前位置：
X-MOL 学术
›
Adv. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Bridging the van der Waals Interface for Advanced Optoelectronic Devices.
Advanced Materials ( IF 27.4 ) Pub Date : 2019-12-23 , DOI: 10.1002/adma.201906874 Yao Wen 1 , Peng He 2 , Yuyu Yao 2 , Yu Zhang 1 , Ruiqing Cheng 2 , Lei Yin 2 , Ningning Li 2 , Jie Li 2 , Junjun Wang 2 , Zhenxing Wang 2 , Chuansheng Liu 1 , Xuan Fang 3 , Chao Jiang 2 , Zhipeng Wei 3 , Jun He 1
Advanced Materials ( IF 27.4 ) Pub Date : 2019-12-23 , DOI: 10.1002/adma.201906874 Yao Wen 1 , Peng He 2 , Yuyu Yao 2 , Yu Zhang 1 , Ruiqing Cheng 2 , Lei Yin 2 , Ningning Li 2 , Jie Li 2 , Junjun Wang 2 , Zhenxing Wang 2 , Chuansheng Liu 1 , Xuan Fang 3 , Chao Jiang 2 , Zhipeng Wei 3 , Jun He 1
Affiliation
|
Van der Waals (vdW) heterostructures exhibit excellent optoelectronic properties and novel functionalities. However, their applicability is impeded due to the common issue of the tunneling barrier, which arises from the vdW gap; this significantly increases the injection resistance of the photoexcited carriers. Herein, a generic strategy is demonstrated to eliminate the vdW gap in a broad class of heterostructures. It is observed that the vdW gap in the interface is bridged via strong orbital hybridization between the interface dangling bonds of nonlayered chalcogenide semiconductors and the artificially induced vacancies of transition metal chalcogenides (TMDCs). The photoresponse times of bridged PbS/ReS2 , PbS/MoSe2 , and PbS/MoS2 are ≈30, 51, and 43 µs, respectively. The photon-triggered on/off ratio of the bridged PbS/MoS2 , ZnSe/MoS2 , and ZnTe/MoS2 heterostructures exceed 106 , 105 , and 105 , respectively. These are several orders of magnitude higher than common vdW heterostructures. The findings obtained in this study present a versatile strategy for overcoming the performance limitations of vdW heterostructures.
中文翻译：
桥接先进光电设备的范德华接口。
范德华（vdW）异质结构具有出色的光电性能和新颖的功能。但是，由于vdW间隙引起的隧道壁垒这一常见问题，阻碍了它们的适用性。这显着增加了光激发载流子的注入阻力。在本文中，展示了一种通用策略来消除广泛种类的异质结构中的vdW间隙。可以观察到，界面中的vdW间隙是通过无层硫属化物半导体的界面悬空键与过渡金属硫属化物（TMDC）的人工诱导空位之间的强轨道杂交而桥接的。桥接的PbS / ReS2，PbS / MoSe2和PbS / MoS2的光响应时间分别为≈30、51和43 µs。桥接的PbS / MoS2，ZnSe / MoS2，和ZnTe / MoS2异质结构分别超过106、105和105。这些比常见的vdW异质结构高几个数量级。在这项研究中获得的发现提出了一种克服vdW异质结构性能局限性的通用策略。
更新日期：2020-02-18
中文翻译：
桥接先进光电设备的范德华接口。
范德华（vdW）异质结构具有出色的光电性能和新颖的功能。但是，由于vdW间隙引起的隧道壁垒这一常见问题，阻碍了它们的适用性。这显着增加了光激发载流子的注入阻力。在本文中，展示了一种通用策略来消除广泛种类的异质结构中的vdW间隙。可以观察到，界面中的vdW间隙是通过无层硫属化物半导体的界面悬空键与过渡金属硫属化物（TMDC）的人工诱导空位之间的强轨道杂交而桥接的。桥接的PbS / ReS2，PbS / MoSe2和PbS / MoS2的光响应时间分别为≈30、51和43 µs。桥接的PbS / MoS2，ZnSe / MoS2，和ZnTe / MoS2异质结构分别超过106、105和105。这些比常见的vdW异质结构高几个数量级。在这项研究中获得的发现提出了一种克服vdW异质结构性能局限性的通用策略。
京公网安备 11010802027423号