Abstract This work demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga–Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

中文翻译：

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GaAs 在单晶层状二维 Bi2Se3 上的生长

摘要 这项工作证明了立方 GaAs (111) 在使用立方 ZnSe 缓冲层实现的单晶 2D 层状 Bi2Se3 (0001) 衬底上的成功生长。该生长顺序是根据观察到的 Bi2Se3 (0001) 衬底与 Ga 和 Zn 之间的反应来选择的。对于我们 MOCVD 反应器中使用的条件，三乙基镓 (TEGa) 与 Bi2Se3 强烈相互作用形成 Ga2Se3，这会破坏 GaAs 的成核和生长。因此，需要一个缓冲层来防止 Ga-Bi2Se3 相互作用，同时为 GaAs 提供合适的生长表面。选择 ZnSe 是因为它与 GaAs 晶格匹配，并且可以通过在二乙基锌 (DEZn) 通量下对 Bi2Se3 进行退火来产生。使用这种生长顺序的样品已经生长，