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The formation mechanism of hexagonal Mo2C defects in CVD graphene grown on liquid copper.
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2020-01-08 , DOI: 10.1039/c9cp05618a Maryam Saeed 1 , Joseph D Robson 2 , Ian A Kinloch 2 , Brian Derby 2 , Chun-Da Liao 2 , Sami Al-Awadhi 3 , Eissa Al-Nasrallah 3
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2020-01-08 , DOI: 10.1039/c9cp05618a Maryam Saeed 1 , Joseph D Robson 2 , Ian A Kinloch 2 , Brian Derby 2 , Chun-Da Liao 2 , Sami Al-Awadhi 3 , Eissa Al-Nasrallah 3
Affiliation
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Thin Mo2C hexagonal defects precipitate in CVD graphene when Mo crucibles are engaged to hold the liquid copper substrate, while these defects disappear when W crucibles are present. These defects have been identified as the thin precipitates of Mo2C. The growth mechanism of the Mo2C defects is demonstrated through thermodynamic calculations. This can be beneficial in graphene defect engineering through the vapour phase transport of the volatile MoO3 phase.
中文翻译：
在液态铜上生长的CVD石墨烯中六角形Mo2C缺陷的形成机理。
当接合Mo坩埚以固定液态铜基板时，薄的Mo2C六角形缺陷会在CVD石墨烯中沉淀，而当存在W坩埚时，这些缺陷会消失。这些缺陷已被确定为Mo2C的薄沉淀物。通过热力学计算证明了Mo2C缺陷的生长机理。通过挥发性MoO3相的气相传输，这在石墨烯缺陷工程中可能是有益的。
更新日期：2020-01-08
中文翻译：
在液态铜上生长的CVD石墨烯中六角形Mo2C缺陷的形成机理。
当接合Mo坩埚以固定液态铜基板时，薄的Mo2C六角形缺陷会在CVD石墨烯中沉淀，而当存在W坩埚时，这些缺陷会消失。这些缺陷已被确定为Mo2C的薄沉淀物。通过热力学计算证明了Mo2C缺陷的生长机理。通过挥发性MoO3相的气相传输，这在石墨烯缺陷工程中可能是有益的。
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