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Impact of Sn 4+ Substitution at Cr 3+ Sites on Thermoelectric and Electronic Properties of p -Type Delafossite CuCrO 2
Journal of Electronic Materials ( IF 2.2 ) Pub Date : 2019-11-12 , DOI: 10.1007/s11664-019-07780-9
Sakwiboon Jantrasee , Chesta Ruttanapun

Abstract

The effects of Sn4+ substitution at Cr3+ sites on the thermoelectric and electronic properties of p-type delafossite CuCrO2 have been studied. CuCr1−xSnxO2 (x = 0.01, 0.03) samples were prepared via conventional solid-state reaction. The Seebeck coefficient results confirmed that all the samples exhibited p-type conduction. X-ray photoelectron spectroscopy verified the presence of Sn4+ ions and the appearance of mixed-state Cr3+/Cr2+ ions. The experimental results revealed that addition of Sn impacted the electrical conductivity due to the mixed Cu1+/Cu2+ states while the Seebeck coefficient was affected by the mixed Cr3+/Sn4+ states. The electrical conductivity was governed by the polaron hopping mechanism, and the large Seebeck coefficient was controlled by the spin and orbital degeneracy of the mixed Cr3+/Sn4+ ions. The electrical conductivity activation energy values were 0.410 eV and 0.407 eV while the thermal activation energy values were 0.208 eV and 0.160 eV, for x = 0.01 and 0.03, respectively. The results confirm that Sn4+ substitution at Cr3+ sites impacted the Seebeck coefficient and electronic behavior of delafossite CuCrO2 oxide even for low dopant levels of x = 0.01 and 0.03, resulting in p-type conduction and optically conducting materials.



中文翻译:

Sn 4+在Cr 3+处的取代对p型Delafossite CuCrO 2的热电和电子性质的影响

抽象的

研究了Cr 3+位点上Sn 4+的取代对p型铜铁矿CuCrO 2的热电和电子性质的影响。 通过常规的固态反应制备CuCr 1- x Sn x O 2x = 0.01,0.03)样品。塞贝克系数结果证实所有样品均表现出p型导电性。X射线光电子能谱验证了Sn 4+离子的存在以及混合态Cr 3+ / Cr 2+的出现。离子。实验结果表明,Sn的添加会影响Cu 1+ / Cu 2+混合态的导电性,而Seebeck系数会受到Cr 3+ / Sn 4+混合态的影响。电导率由极化子跳跃机制控制,大的塞贝克系数由混合的Cr 3+ / Sn 4+离子的自旋和轨道简并性控制。对于x  = 0.01和0.03,电导率活化能值为0.410eV和0.407eV,而热活化能值为0.208eV和0.160eV 。结果证实Cr处的Sn 4+取代3+的位点甚至在x  = 0.01和0.03的低掺杂水平下也会影响铜铁矿CuCrO 2氧化物的塞贝克系数和电子行为,从而导致p型导电和光导材料。

更新日期:2019-12-21
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