P-type SnO₂ films co-doping Al and N increased the high solubility N in the SnO₂ host lattice without degrading the crystal structure of the film. The solubility N in the SnO₂ host lattice increased with the Al₂O₃ content in the ATO (Al₂O₃ doped SnO₂) target, and the optimum Al₂O₃ content was found to be 6 %wt, which corresponds with the best film crystal quality. The optimum optical, electrical, and structural properties of films were achieved at a deposition temperature of 300 °C in a mixture of 50 % Ar and 50 % N₂ gas from 6 %wt Al₂O₃-doped SnO₂ target. The Al³⁺–Sn⁴⁺ and N³⁻–O²⁻ substitution was verified using measurements, such as X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, and XRD patterns. Data regarding the tetragonal rutile to cubic phase transformation indicated the N³⁻–O²⁻ substitution, while the Al³⁺–Sn⁴⁺ replacement was also verified by the appearance of an additional (101) lattice reflection. The resistivity, hole concentration, and hole mobility of the ANTO-6-50 film achieved the best values were 7.1 × 10⁻³ Ω cm, 6.24 × 10¹⁹ cm⁻³, and 14.1 cm² V⁻¹ s⁻¹, respectively. The I–V characteristics of p-ANTO-x-50/n-Si heterojunctions under illumination showed p-type conductive properties of the ANTO-x-50 films and a good reproducible photocurrent response of the p-ANTO-x-50/n-Si heterojunction diodes.

共掺杂Al和N的P型SnO ₂膜增加了SnO ₂主晶格中的高溶解度N，而不会降低膜的晶体结构。在的SnO溶解度Ñ ₂主晶格随Al增加₂ Ó ₃在ATO含量（铝₂ ö ₃掺杂的SnO ₂）靶，最佳的Al ₂ ö ₃含量为6％（重量），其与对应最好的电影水晶质量。膜的最佳光学，电学和结构性能是在沉积温度为300°C且由6 wt％的Al _2组成的50％Ar和50％N ₂气体的混合物中实现的O ₃掺杂的SnO ₂靶。使用X射线光电子能谱，紫外可见光谱和XRD图谱等测量来验证Al ³⁺ -Sn ⁴⁺和N ^3- -O ^2-的取代。有关四方金红石到立方相转变的数据表明，N ^3-- O ^2-取代，而Al ³⁺ -Sn ⁴⁺取代也通过额外的（101）晶格反射来证实。电阻率，空穴浓度和ANTO-6-50膜的空穴迁移率达到的最佳值分别为7.1×10 ^-3 Ω厘米，6.24×10 ¹⁹cm ^-3和14.1 cm ² V ^-1 s ^-1。p-ANTO- x -50 / n-Si异质结的I–V特性在光照下显示出ANTO- x -50膜的p型导电特性，并且p-ANTO- x -50 /具有良好的可复制光电流响应n-Si异质结二极管。