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A self-encapsulated broadband phototransistor based on a hybrid of graphene and black phosphorus nanosheets
Nanoscale Advances ( IF 4.7 ) Pub Date : 2019/12/20 , DOI: 10.1039/c9na00528e
Guigang Zhou 1 , Zhongjun Li 2 , Yanqi Ge 2 , Han Zhang 2 , Zhenhua Sun 1
Affiliation  

A phototransistor based on a hybrid of graphene and BP nanosheets with a facile fabrication method and remarkable performance is presented. Unlike previously reported single BP flake-based devices, this phototransistor employs diverse BP nanosheets with different sizes and layer numbers. The wet transfer process of graphene is exploited to integrate the liquid-exfoliated BP nanosheets into the device smoothly. Due to the diversity of BP nanosheets, the device demonstrates a broadband photo-response in the spectrum from 360 nm to 785 nm. The photo-response mechanism is revealed to be the photogating effect caused by the discrete BP nanosheets adsorbed on graphene. The phototransistor has a responsivity of 7.7 × 103 A W−1 in the near-UV region with a wide conductive channel of 200 μm. Moreover, the simplified wet transfer process of graphene leaves a self-encapsulated layer of PMMA on the as-prepared device, inducing a good atmospheric stability in the device. This report provides a valid, implantable, and facile strategy to apply BP nanosheets in a broadband, high-performing and air-stable photodetector.

中文翻译:

基于石墨烯和黑磷纳米片混合的自封装宽带光电晶体管

提出了一种基于石墨烯和 BP 纳米片混合的光电晶体管,具有简单的制造方法和卓越的性能。与之前报道的单个 BP 薄片基器件不同,这种光电晶体管采用不同尺寸和层数的不同 BP 纳米片。利用石墨烯的湿转移过程将液体剥离的 BP 纳米片顺利集成到器件中。由于 BP 纳米片的多样性,该器件在 360 nm 至 785 nm 的光谱范围内表现出宽带光响应。揭示了光响应机制是由吸附在石墨烯上的离散BP纳米片引起的光门控效应。光电晶体管的响应度为 7.7 × 10 3 AW -1在近紫外区域,具有 200 μm 的宽导电通道。此外,石墨烯的简化湿转移过程在所制备的器件上留下了 PMMA 的自封装层,从而在器件中产生了良好的大气稳定性。本报告提供了一种有效、可植入且简便的策略,可将 BP 纳米片应用于宽带、高性能和空气稳定的光电探测器。
更新日期:2020-03-19
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