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Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study.
Nanoscale ( IF 5.8 ) Pub Date : 2020-01-08 , DOI: 10.1039/c9nr07202k Vivek Beladiya 1 , Martin Becker , Tahsin Faraz , W M M Erwin Kessels , Paul Schenk , Felix Otto , Torsten Fritz , Marco Gruenewald , Christian Helbing , Klaus D Jandt , Andreas Tünnermann , Marek Sierka , Adriana Szeghalmi
Nanoscale ( IF 5.8 ) Pub Date : 2020-01-08 , DOI: 10.1039/c9nr07202k Vivek Beladiya 1 , Martin Becker , Tahsin Faraz , W M M Erwin Kessels , Paul Schenk , Felix Otto , Torsten Fritz , Marco Gruenewald , Christian Helbing , Klaus D Jandt , Andreas Tünnermann , Marek Sierka , Adriana Szeghalmi
Affiliation
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The growth, chemical, structural, mechanical, and optical properties of oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) are strongly influenced by the average-bias voltage applied during the reaction step of surface functional groups with oxygen plasma species. Here, this effect is investigated thoroughly for SiO2 deposited in two different PEALD tools at average-bias voltages up to -300 V. Already at a very low average-bias voltage (< -10 V), the SiO2 films have significantly lower water content than films grown without biasing together with the formation of denser films having a higher refractive index and nearly stoichiometric composition. Substrate biasing during PEALD also enables control of mechanical stress. The experimental findings are supported by density functional theory and atomistic simulations. They demonstrate that the application of an electric field during the plasma step results in an increased energy transfer between energetic ions and the surface, directly influencing relevant surface reactions. Applying an electric field during the PEALD process leads to SiO2 thin films with significantly improved properties comparable to films grown by ion beam sputtering.
中文翻译：
在等离子体增强原子层沉积二氧化硅薄膜的过程中，电场的影响：一项实验和计算研究。
通过等离子增强原子层沉积（PEALD）沉积的氧化物薄膜的生长，化学，结构，机械和光学性质受表面官能团与氧等离子物质反应步骤中施加的平均偏压的强烈影响。在此，对在两种不同PEALD工具中以-300 V的平均偏置电压沉积的SiO2进行了彻底研究。在非常低的平均偏置电压（<-10 V）下，SiO2膜的水含量明显降低相比于没有偏置而生长的膜，以及具有更高折射率和接近化学计量组成的致密膜的形成。PEALD期间的基板偏置也可以控制机械应力。实验结果得到密度泛函理论和原子模拟的支持。他们证明，在等离子体步骤中施加电场会导致高能离子与表面之间的能量转移增加，从而直接影响相关的表面反应。在PEALD过程中施加电场可以使SiO2薄膜的性能大大提高，与通过离子束溅射法生长的薄膜相比。
更新日期：2020-01-08
中文翻译：
在等离子体增强原子层沉积二氧化硅薄膜的过程中，电场的影响：一项实验和计算研究。
通过等离子增强原子层沉积（PEALD）沉积的氧化物薄膜的生长，化学，结构，机械和光学性质受表面官能团与氧等离子物质反应步骤中施加的平均偏压的强烈影响。在此，对在两种不同PEALD工具中以-300 V的平均偏置电压沉积的SiO2进行了彻底研究。在非常低的平均偏置电压（<-10 V）下，SiO2膜的水含量明显降低相比于没有偏置而生长的膜，以及具有更高折射率和接近化学计量组成的致密膜的形成。PEALD期间的基板偏置也可以控制机械应力。实验结果得到密度泛函理论和原子模拟的支持。他们证明，在等离子体步骤中施加电场会导致高能离子与表面之间的能量转移增加，从而直接影响相关的表面反应。在PEALD过程中施加电场可以使SiO2薄膜的性能大大提高，与通过离子束溅射法生长的薄膜相比。
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