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Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-12-19 , DOI: 10.1002/aelm.201901091
Manasvi Kumar 1 , Dimitra G. Georgiadou 2 , Akmaral Seitkhan 3 , Kalaivanan Loganathan 3 , Emre Yengel 3 , Hendrik Faber 3 , Dipti Naphade 3 , Aniruddha Basu 3 , Thomas D. Anthopoulos 3 , Kamal Asadi 1
Affiliation  

Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current‐voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography‐based device fabrication method that would allow for their mass production. Co‐planar FTJs that are fabricated using wafer‐scale adhesion lithography technique are demonstrated, and a bi‐stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], and employ asymmetric co‐planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography‐based nano‐patterning technique and could pave the way to new and exciting memory device concepts.

中文翻译:

共面聚合物铁电隧道结中的巨大隧道电阻

铁电隧道结(FTJ)是理想的电阻开关设备,因为它们具有确定性,并且可以在低电压下工作。但是,由于以下三个关键问题,FTJ仍然主要是出于科学的好奇心:电流电压特性缺乏整流,隧道隧穿电阻(TER)效应小以及缺乏基于光刻的简单的器件制造方法而无法满足其要求大量生产。演示了使用晶圆级粘合光刻技术制造的共面FTJ,并显示了巨大的TER接近10 6的双稳态整流行为。显示出室温下的%。FTJ基于聚偏二氟乙烯-共-三氟乙烯[P(VDF-TrFE)],并采用间隔小于20 nm的不对称共面金属电极。使用西蒙斯直接隧穿模型可以证实电荷传输的隧穿性质。本工作是通过可扩展的基于光刻的纳米图案化技术制造的功能性FTJ的首次演示,可为新的令人兴奋的存储设备概念铺平道路。
更新日期:2020-02-13
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