Li can find itself a wide range of applications since it is the lightest metal. However, Li detection by microscopy‐based techniques is problematic because of the highly susceptible nature during electron beam irradiation. ToF‐SIMS is a versatile technique to detect Li but the detection of light materials is also problematic due to the large ion contaminated zone and low sputtering yield. By combining ToF‐SIMS with a recently launched Xe ion source FIB‐SEM, which has small ion contamination and high sputtering yield features, can produce more realistic data at near surface and below the surface region especially for the detection of lightweight materials such as Li. In this study, Li detection and mapping capabilities of ToF‐SIMS attached to the FIB‐SEM with Ga and Xe ion sources were discussed for Al incorporated Li7La3Zr2O12 solid electrolyte sample that contains Li and Al rich regions at triple junctions. In spite of smoother milling from Ga source, Xe performs more precisely in Li mapping. Low ion contaminated zone, high sputtering yield and low straggling obtained from Monte Carlo simulations are the main advantages of Xe ion sources. The Li detection efficiency for Xe is higher than Ga source discriminating the LiAlO2 phase placed at the triple junctions of grains and La2Zr2O7 regions placed at the outer side of LLZO neighbouring the LiAlO2 phase.

中文翻译：

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使用 ToF-SIMS 结合 FIB-SEM 比较氙和镓源对含锂材料中锂的检测和映射

由于锂是最轻的金属，因此它的应用范围很广。然而，由于电子束照射过程中锂的高度敏感，基于显微镜技术的锂检测存在问题。ToF-SIMS 是一种检测锂的通用技术，但由于离子污染区大和溅射产率低，轻材料的检测也存在问题。通过将 ToF-SIMS 与最近推出的 Xe 离子源 FIB-SEM 相结合，该离子源具有离子污染小和溅射产额高的特点，可以在近表面和表面以下区域产生更真实的数据，特别是对于轻质材料（如锂）的检测. 在这项研究中，针对在三重结处含有富锂和富铝区域的掺铝 Li7La3Zr2O12 固体电解质样品，讨论了连接到具有 Ga 和 Xe 离子源的 FIB-SEM 上的 ToF-SIMS 的 Li 检测和映射能力。尽管 Ga 源的铣削更平滑，但 Xe 在 Li 映射中表现得更精确。从蒙特卡罗模拟获得的低离子污染区、高溅射率和低散乱是氙离子源的主要优点。Xe 的 Li 检测效率高于 Ga 源，区分位于晶粒三重结处的 LiAlO2 相和位于与 LiAlO2 相相邻的 LLZO 外侧的 La2Zr2O7 区域。从蒙特卡罗模拟获得的低离子污染区、高溅射率和低散乱是氙离子源的主要优点。Xe 的 Li 检测效率高于 Ga 源，区分位于晶粒三重结处的 LiAlO2 相和位于与 LiAlO2 相相邻的 LLZO 外侧的 La2Zr2O7 区域。从蒙特卡罗模拟获得的低离子污染区、高溅射率和低散乱是氙离子源的主要优点。Xe 的 Li 检测效率高于 Ga 源，区分位于晶粒三重结处的 LiAlO2 相和位于与 LiAlO2 相相邻的 LLZO 外侧的 La2Zr2O7 区域。