Developing new-style non-volatile memory is an important part to solve von Neumann bottleneck. Among numerous studies of memory device, resistive random-access memory (RRAM) is widely researched for their simple geometrical structure and high integration density. In recent decades, organic RRAM catches many researchers’ attention for their superiorities such as outstanding flexibility, simple solution processability, low-cost fabrication and tunable functionalities by changing the chemical groups. Herein, a series of organic small molecules 2,7-di(9H-carbazol-9-yl)-9H-fluoren-9-one (FLOCZ) and 2,7-bis(3,6-di-tert-butyl-9H-carbazol-9-yl)-9H-fluoren-9-one (FLOBCZ) are synthesized and their band structures and electronic states are systematically studied with the assistance of density function theory (DFT). Then, using simple solution-processing approach, FLOCZ/FLOBCZ based RRAMs are fabricated and their memory characteristics are studied. The as-fabricated Ag/FLOBCZ/ITO RRAM exhibits non-volatile memory effect with a memory window up to 7 × 10³ and data retention time of more than 2 × 10⁴ s, which can meet the requirement of data storage. Meanwhile, by controlling compliance current on the RRAM precisely, multi-level data storage can be implemented experimentally. Our work extends the applications of organic small molecule and promotes the evolution of organic RRAM.

开发新型非易失性存储器是解决冯·诺依曼瓶颈的重要组成部分。在存储设备的众多研究中，电阻式随机存取存储器（RRAM）因其简单的几何结构和高集成密度而得到了广泛的研究。近几十年来，有机RRAM的优越性（例如出色的灵活性，简单的溶液可加工性，低成本的制造以及可通过改变化学基团实现的可调功能）吸引了许多研究人员的注意。本文中，一系列有机小分子2,7-二（9H-咔唑-9-基）-9H-氟-9-一（FLOCZ）和2,7-双（3,6-二叔丁基-合成了9H-咔唑-9-基）-9H-芴-9-一（FLOBCZ），并借助密度泛函理论（DFT）系统地研究了其能带结构和电子态。然后，使用简单的解决方案处理方法，制造了基于FLOCZ / FLOBCZ的RRAM，并研究了它们的存储特性。制成的Ag / FLOBCZ / ITO RRAM具有非易失性存储效果，存储窗口可达7×10³，数据保留时间大于2×10 ⁴  s，可以满足数据存储的要求。同时，通过精确控制RRAM上的顺应性电流，可以通过实验实现多层数据存储。我们的工作扩展了有机小分子的应用，并促进了有机RRAM的发展。