In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector,CrystEngComm

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In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector
CrystEngComm ( IF 2.6 ) Pub Date : 2019/12/18 , DOI: 10.1039/c9ce01852b
Titao Li _{1,

2,

3,

4,

5} , Fei Wang _{1,

2,

3,

4,

5} , Richeng Lin _{1,

2,

3,

4,

5} , Wentao Xie _{1,

2,

3,

4,

5} , Yuqiang Li _{1,

2,

3,

4,

5} , Wei Zheng _{1,

2,

3,

4,

5} , Feng Huang _{1,

2,

3,

4,

5}

Affiliation

Vacuum ultraviolet (VUV) photodetection has great application prospects in the fields of space exploration, environmental science and biomedicine. In this work, we will present VUV-sensitive AlN single crystalline films (SCFs) with low defect density, grown by our independently designed in-plane enhanced hetero-epitaxial method. By combining the as-grown films with p-type graphene (p-Gr) serving as a transparent conductive layer, a VUV photovoltaic detector with a p-Gr/i-AlN/n-GaN structure was constructed. At zero bias, the detector exhibits an ultrafast response time of 2.86 μs, which is 2 orders of magnitude faster than that of a previously reported h-BN photoconductive detector. Besides, it also has an ultra-high photovoltage of 2 V and an excellent spectral selectivity. The results have demonstrated that the in-plane enhanced epitaxy strategy is expected to provide reference for the preparation of high-quality AlN and to promote the development of VUV detectors in deep space science.

中文翻译：

台阶流AlN的面内增强外延技术可产生高性能的真空紫外光电探测器

真空紫外（VUV）光电检测在太空探索，环境科学和生物医学领域具有广阔的应用前景。在这项工作中，我们将展示低缺陷密度的VUV敏感AlN单晶膜（SCF），它是通过我们独立设计的面内增强异质外延方法生长的。通过将生长的薄膜与用作透明导电层的p型石墨烯（p-Gr）结合在一起，构建了具有p-Gr / i-AlN / n-GaN结构的VUV光电探测器。在零偏压下，检测器表现出2.86μs的超快响应时间，比以前报道的h-BN光电导检测器快2个数量级。此外，它还具有2 V的超高光电压和出色的光谱选择性。

更新日期：2020-02-10

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