Abstract

BST films were prepared on Pt/Ti/SiO₂/Si substrates by spin-coating method and double-layer BST films with parallel structure were designed in order to improve their dielectric and flexoelectric properties. The best dielectric constant 409 and dielectric loss 0.0104 of the single-layer BST film are obtained at 800 °C annealing temperature. The dielectric constant of double-layer BST films with parallel structure almost doubled to about 800. The maximum of equivalent piezoelectric constant of the single-layer BST film is 107 pC/N, while the values reach 198 and 251 pC/N, respectively, for BST1/ZrO₂/BST2 and BST1/MgO/BST2 parallel structure films. The flexoelectric properties of BST1/MgO/BST2 films are better than those of BST1/ZrO₂/BST2 films. When LSCO is applied as the inner electrode, the dielectric properties of the double-layer BST films are better than those applied Au electrode. The curves of transverse flexoelectric signal of the former are smoother than those of the latter.

中文翻译：

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中间层和电极材料对平行结构双层BST薄膜介电和弯曲电性能的影响

抽象的

通过旋涂法在Pt / Ti / SiO ₂ / Si衬底上制备了BST薄膜，并设计了具有平行结构的双层BST薄膜，以提高其介电性能和柔电性能。单层BST膜的最佳介电常数409和介电损耗0.0104在800°C的退火温度下获得。具有平行结构的双层BST膜的介电常数几乎翻了一番，达到约800。单层BST膜的等效压电常数的最大值为107 pC / N，而该值分别达到198和251 pC / N，用于BST1 / ZrO ₂ / BST2和BST1 / MgO / BST2平行结构膜。BST1 / MgO / BST2薄膜的弯曲电性能优于BST1 / ZrO _2的弯曲电性能/ BST2电影。当将LSCO用作内部电极时，双层BST膜的介电性能要优于所应用的Au电极。前者的横向柔性电信号的曲线比后者的平滑。