Abstract Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H2) gas mixtures. The chemical composition of the SiCN films was controlled by adjusting the NH3/H2 flow rate ratio. X-ray photoelectron spectroscopy measurements revealed that the carbon and nitrogen contents of the films were controllable from 10 to 35 at.%, while the silicon content remained almost constant at 45 at.%. Although the homogeneity of the SiCN films deposited using HMDS diluted only with H2 degraded with increasing stage temperature from 400 to 800 °C, it was improved by replacing H2 with NH3. Upon introducing NH3, the nitrogen content increased as carbon content decreased accompanied by the replacement of Si C and C C bonds by Si N, N H, and C H bonds, which led to the deterioration of the mechanical properties of the SiCN films.

中文翻译：

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热线化学气相沉积法控制 H2/NH3 混合气体气氛中六甲基二硅氮烷形成的碳氮化硅薄膜的化学成分

摘要 使用六甲基二硅氮烷 (HMDS) 作为单一源气体，在氨 (NH3) 和氢气 (H2) 气体混合物中稀释，通过热线化学气相沉积法沉积了氮化碳 (SiCN) 薄膜。通过调节 NH3/H2 流量比来控制 SiCN 薄膜的化学成分。X 射线光电子能谱测量表明，薄膜的碳和氮含量可控制在 10 到 35 原子％，而硅含量几乎保持在 45 原子％。虽然使用仅用 H2 稀释的 HMDS 沉积的 SiCN 薄膜的均匀性随着阶段温度从 400 到 800 °C 降低，但通过用 NH3 代替 H2 得到了改善。引入 NH3 后，随着碳含量的降低，随着 Si C 和 CC 键被 Si N、NH、