Surface potential of a solution-processed thin film of an organic semiconductor, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH₂), on n-type silicon (n-Si) substrate has been studied by using Kelvin probe force microscopy, and discussed the interface properties of organic/inorganic semiconductors. The molecular step and terrace structure was observed on the surface of solution-processed C6PcH₂ thin film as a feature of the crystallites composed of C6PcH₂ columns lying on the substrate. The surface potential changed depending on the distance from the interface, and exceeded 0.4 eV, which indicated the difference of Fermi levels between C6PcH₂ and n-Si. The linear and non-linear relationships between the surface potential and the distance from the interface were discussed by taking the vacuum level shift and impurity carriers into consideration.

研究了在n型硅（n-Si）衬底上对有机半导体1,4,8,11,15,18,22,25-辛己基酞菁（C6PcH ₂）进行固溶处理后的薄膜的表面电势通过使用开尔文探针力显微镜，并讨论了有机/无机半导体的界面特性。在溶液处理的C6PcH ₂薄膜的表面上观察到分子台阶和平台结构，这是由位于基底上的C6PcH ₂柱组成的微晶的特征。表面电势根据距界面的距离而变化，并超过0.4 eV，这表明C6PcH ₂之间的费米能级不同和n-Si。通过考虑真空能级移动和杂质载流子，讨论了表面电势与到界面的距离之间的线性和非线性关系。