Defect-based quantum emitters in solid-state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. The ability to quickly and accurately survey emitter ensembles is important for characterizing these new quantum emitter systems. In some materials, however, optical properties vary widely among emitters, even within the same sample. In these cases, traditional ensemble fluorescence measurements are confounded by heterogeneity, whereas individual defect-by-defect studies are impractical. Here we describe a method to quantitatively and systematically analyze the properties of heterogeneous emitter ensembles using large-area photoluminescence maps. We apply this method to study the effects of sample treatments on emitters in hexagonal boron nitride, and we find that low-energy (3 keV) electron irradiation creates emitters, whereas high-temperature (850 °C) annealing in an inert gas environment brightens emitters.

中文翻译：

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异质发射体集合的高效光学定量

固态材料中基于缺陷的量子发射器为量子通信和传感提供了一个有希望的平台。共聚焦荧光显微镜技术已经揭示了多种基质材料中的量子发射体。快速准确地测量发射极集合的能力对于表征这些新的量子发射极系统非常重要。但是，在某些材料中，即使在同一样品中，光学性质在发射器之间也会有很大差异。在这些情况下，传统的集成荧光测量会因异质性而混淆，而逐个缺陷的研究则是不切实际的。在这里，我们描述了一种使用大面积光致发光图定量和系统地分析异质发射体集合的特性的方法。